AFN7420 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN7420  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOT-323

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AFN7420 datasheet

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AFN7420

AFN7420 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7420, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

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 afn7424s.pdf pdf_icon

AFN7420

AFN7424S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7424S, N-Channel enhancement mode 30V/20A,RDS(ON)=5m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:553K  alfa-mos
 afn7412.pdf pdf_icon

AFN7420

AFN7412 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7412, N-Channel enhancement mode 20V/3.8A,RDS(ON)=52m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=56m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=68m @VGS=1.8V These devices are particularly suited for low Supe

 9.2. Size:573K  alfa-mos
 afn7402.pdf pdf_icon

AFN7420

AFN7402 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN7402, N-Channel enhancement mode 20V/3.6A,RDS(ON)=60m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=90m @VGS=1.8V These devices are particularly suited for low Supe

MOSTRAR MÁS

Otros transistores... AFN6830, AFN7002AS, AFN7002DS, AFN7002KAS, AFN7106S, AFN7400, AFN7402, AFN7412, 12N60, AFN7424S, AFN7472S, AFN8205, AFN8411, AFN8412, AFN8439, AFN8471, AFN8495