AFN8412 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN8412  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 22 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: SOT-223

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AFN8412 datasheet

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AFN8412

AFN8412 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8412, N-Channel enhancement mode 100V/3.6A,RDS(ON)=300m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=310m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

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AFN8412

AFN8411 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8411, N-Channel enhancement mode 100V/5.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.6A,RDS(ON)=125m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.1. Size:594K  alfa-mos
 afn8471.pdf pdf_icon

AFN8412

AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.2. Size:584K  alfa-mos
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AFN8412

AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN7400, AFN7402, AFN7412, AFN7420, AFN7424S, AFN7472S, AFN8205, AFN8411, IRF530, AFN8439, AFN8471, AFN8495, AFN8816, AFN8822, AFN8822S, AFN8832, AFN8904