AFN8439 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN8439
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de AFN8439 MOSFET
AFN8439 Datasheet (PDF)
afn8439.pdf
AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn8412.pdf
AFN8412 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8412, N-Channel enhancement mode 100V/3.6A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn8471.pdf
AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn8495.pdf
AFN8459 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8459, N-Channel enhancement mode 30V/6.0A,RDS(ON)=44m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
Otros transistores... AFN7402 , AFN7412 , AFN7420 , AFN7424S , AFN7472S , AFN8205 , AFN8411 , AFN8412 , IRLB4132 , AFN8471 , AFN8495 , AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , AFN8918 .
History: RU80N15S | HUF75852G3
History: RU80N15S | HUF75852G3
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