AFN9971B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN9971B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm

Encapsulados: TO-252

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AFN9971B datasheet

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AFN9971B

AFN9971B Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971B, N-Channel enhancement mode 60V/18A,RDS(ON)= 56m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 62m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

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AFN9971B

AFN9971 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)= 50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.1. Size:773K  alfa-mos
 afn9977.pdf pdf_icon

AFN9971B

AFN9977 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9977, N-Channel enhancement mode 60V/8A,RDS(ON)= 118m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)= 130m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for lo

 8.2. Size:848K  alfa-mos
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AFN9971B

AFN9972S Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN9972S, N-Channel enhancement mode 60V/35A,RDS(ON)= 15m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)= 18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited for

MOSTRAR MÁS

Otros transistores... AFN8968, AFN8987, AFN8987W, AFN8988, AFN8988W, AFN9530, AFN9910, AFN9971, 20N50, AFN9972S, AFN9977, AFN9987, AFN9995S, AFN9997, AFP1013, AFP1023, AFP1033