AFP2311 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFP2311
Código: 11*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.8 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 1 nS
Conductancia de drenaje-sustrato (Cd): 115 pF
Resistencia entre drenaje y fuente RDS(on): 0.056 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET AFP2311
AFP2311 Datasheet (PDF)
afp2311.pdf
AFP2311 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low
afp2311a.pdf
AFP2311A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=60m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=75m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for lo
afp2319as.pdf
AFP2319AS Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=120m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp2317.pdf
AFP2317 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp2319a.pdf
AFP2319A Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
