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AFP3401S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP3401S
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

AFP3401S Datasheet (PDF)

 ..1. Size:634K  alfa-mos
 afp3401s.pdf pdf_icon

AFP3401S

AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m@VGS=-2.5V These devices are particularly suited fo

 7.1. Size:766K  alfa-mos
 afp3401as.pdf pdf_icon

AFP3401S

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105@VGS=-2.5V These devices are particularly suited for lo

 8.1. Size:462K  alfa-mos
 afp3405.pdf pdf_icon

AFP3401S

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.2. Size:662K  alfa-mos
 afp3407as.pdf pdf_icon

AFP3401S

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CP650 | WM02N08L

 

 
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