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AFP3403A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP3403A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT-23
 

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AFP3403A Datasheet (PDF)

 ..1. Size:697K  alfa-mos
 afp3403a.pdf pdf_icon

AFP3403A

AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m@VGS=-2.5V These devices are particularly suited fo

 7.1. Size:565K  alfa-mos
 afp3403.pdf pdf_icon

AFP3403A

AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m@VGS=-2.5V These devices are particularly suited fo

 8.1. Size:462K  alfa-mos
 afp3405.pdf pdf_icon

AFP3403A

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.2. Size:662K  alfa-mos
 afp3407as.pdf pdf_icon

AFP3403A

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

MOSTRAR MÁS

Otros transistores... AFP2367S , AFP2379 , AFP2911W , AFP2913W , AFP3050S , AFP3401AS , AFP3401S , AFP3403 , IRF640N , AFP3405 , AFP3407AS , AFP3407S , AFP3411 , AFP3413 , AFP3413A , AFP3415 , AFP3425 .

History: 7N60L-B-TA3 | DCC080M120A | UTT80N06 | SHD225509 | NTD5804NT4G | NCE60NF200T | SRT04N016LTC-GS

 

 
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