AFP3403A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP3403A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: SOT-23

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AFP3403A datasheet

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AFP3403A

AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m @VGS=-2.5V These devices are particularly suited fo

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 afp3403.pdf pdf_icon

AFP3403A

AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V These devices are particularly suited fo

 8.1. Size:462K  alfa-mos
 afp3405.pdf pdf_icon

AFP3403A

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.2. Size:662K  alfa-mos
 afp3407as.pdf pdf_icon

AFP3403A

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

MOSTRAR MÁS

Otros transistores... AFP2367S, AFP2379, AFP2911W, AFP2913W, AFP3050S, AFP3401AS, AFP3401S, AFP3403, IRFB4110, AFP3405, AFP3407AS, AFP3407S, AFP3411, AFP3413, AFP3413A, AFP3415, AFP3425