AFP3415 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFP3415  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 165 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SOT-23

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AFP3415 datasheet

 ..1. Size:557K  alfa-mos
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AFP3415

AFP3415 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.4A,RDS(ON)=58m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=85m @VGS=1.8V These devices are particularly suited for low

 8.1. Size:481K  alfa-mos
 afp3411.pdf pdf_icon

AFP3415

AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.2. Size:520K  alfa-mos
 afp3413.pdf pdf_icon

AFP3415

AFP3413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=95m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=125m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=205m @VGS=-1.8V These devices are particularly suited for

 8.3. Size:651K  alfa-mos
 afp3413a.pdf pdf_icon

AFP3415

AFP3413A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=230m @VGS=-1.8V These devices are particularly suited f

MOSTRAR MÁS

Otros transistores... AFP3403, AFP3403A, AFP3405, AFP3407AS, AFP3407S, AFP3411, AFP3413, AFP3413A, AON6414A, AFP3425, AFP3459, AFP3481S, AFP3485, AFP3497, AFP3679S, AFP3804, AFP3981