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AFP3415 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFP3415
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 165 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT-23
 

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AFP3415 Datasheet (PDF)

 ..1. Size:557K  alfa-mos
 afp3415.pdf pdf_icon

AFP3415

AFP3415 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.4A,RDS(ON)=58m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=85m@VGS=1.8V These devices are particularly suited for low

 8.1. Size:481K  alfa-mos
 afp3411.pdf pdf_icon

AFP3415

AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 8.2. Size:520K  alfa-mos
 afp3413.pdf pdf_icon

AFP3415

AFP3413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=95m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=125m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=205m@VGS=-1.8V These devices are particularly suited for

 8.3. Size:651K  alfa-mos
 afp3413a.pdf pdf_icon

AFP3415

AFP3413A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=230m@VGS=-1.8V These devices are particularly suited f

MOSTRAR MÁS

Otros transistores... AFP3403 , AFP3403A , AFP3405 , AFP3407AS , AFP3407S , AFP3411 , AFP3413 , AFP3413A , IRFB4110 , AFP3425 , AFP3459 , AFP3481S , AFP3485 , AFP3497 , AFP3679S , AFP3804 , AFP3981 .

History: MTN3820J3 | STD5NK40ZT4 | 5N65AF | 2SK1073 | 2SK1433 | 2SJ673 | SSM4835M

 

 
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