AFP3425 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFP3425 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1000 nS
Cossⓘ - Capacitancia de salida: 115 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
Encapsulados: TSOP-6
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AFP3425 datasheet
..1. Size:501K alfa-mos
afp3425.pdf 
AFP3425 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.2A,RDS(ON)=70m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V These devices are particularly suited for low
9.1. Size:481K alfa-mos
afp3411.pdf
AFP3411 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology -30V/-4.5A,RDS(ON)=46m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
9.2. Size:531K alfa-mos
afp3497.pdf
AFP3497 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3497, P-Channel enhancement mode -20V/-3.8A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=140m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m @VGS=-1.8V These devices are particularly suited for
9.3. Size:579K alfa-mos
afp3459.pdf
AFP3459 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m @VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)=138m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
9.4. Size:520K alfa-mos
afp3413.pdf
AFP3413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=95m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)=125m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=205m @VGS=-1.8V These devices are particularly suited for
9.5. Size:462K alfa-mos
afp3405.pdf
AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
9.6. Size:651K alfa-mos
afp3413a.pdf
AFP3413A Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=120m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.2A,RDS(ON)=170m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=230m @VGS=-1.8V These devices are particularly suited f
9.7. Size:756K alfa-mos
afp3485.pdf
AFP3485 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3485, P-Channel enhancement mode -30V/ -12A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/ -10A,RDS(ON)=37m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
9.8. Size:662K alfa-mos
afp3407as.pdf
AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl
9.9. Size:644K alfa-mos
afp3481s.pdf
AFP3481S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.10. Size:766K alfa-mos
afp3401as.pdf
AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70 @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80 @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105 @VGS=-2.5V These devices are particularly suited for lo
9.11. Size:557K alfa-mos
afp3415.pdf
AFP3415 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-3.4A,RDS(ON)=58m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=85m @VGS=1.8V These devices are particularly suited for low
9.12. Size:565K alfa-mos
afp3403.pdf
AFP3403 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=125m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V These devices are particularly suited fo
9.13. Size:697K alfa-mos
afp3403a.pdf
AFP3403A Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3403A, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=130m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.2A,RDS(ON)=160m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2A,RDS(ON)=270m @VGS=-2.5V These devices are particularly suited fo
9.14. Size:530K alfa-mos
afp3407s.pdf
AFP3407S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=95m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
9.15. Size:634K alfa-mos
afp3401s.pdf
AFP3401S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401S, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=65m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A,RDS(ON)=105m @VGS=-2.5V These devices are particularly suited fo
Otros transistores... AFP3403A, AFP3405, AFP3407AS, AFP3407S, AFP3411, AFP3413, AFP3413A, AFP3415, IRFB4115, AFP3459, AFP3481S, AFP3485, AFP3497, AFP3679S, AFP3804, AFP3981, AFP3993
