IRLU2705 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLU2705
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 220 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
Encapsulados: TO251
Búsqueda de reemplazo de IRLU2705 MOSFET
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IRLU2705 datasheet
irlr2705pbf irlu2705pbf.pdf
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p
irlu2705pbf irlr2705pbf.pdf
PD - 95062A IRLR2705PbF IRLU2705PbF l Logic-Level Gate Drive HEXFET Power MOSFET l Ultra Low On-Resistance D l Surface Mount (IRLR2705) VDSS = 55V l Straight Lead (IRLU2705) l Advanced Process Technology l Fast Switching RDS(on) = 0.040 G l Fully Avalanche Rated l Lead-Free ID = 28A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced p
irlu2705.pdf
isc N-Channel MOSFET Transistor IRLU2705 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
irlr2703 irlu2703.pdf
PD- 95083A IRLR/U2703PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D VDSS = 30V l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology RDS(on) = 0.045 G l Fast Switching l Fully Avalanche Rated ID = 23A S l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te
Otros transistores... IRLU110A , IRLU120A , IRLU120N , IRLU130A , IRLU210A , IRLU220A , IRLU230A , IRLU2703 , IRF730 , IRLU2905 , IRLU3103 , IRLU3303 , IRLU3410 , IRLW510A , IRLW520A , IRLW530A , IRLW540A .
History: LDP9933ET1G | IRFH5304 | FDP027N08B
History: LDP9933ET1G | IRFH5304 | FDP027N08B
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