ALD1103SBL Todos los transistores

 

ALD1103SBL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ALD1103SBL

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 10 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.04 A

Tjⓘ - Temperatura máxima de unión: 70 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 75 Ohm

Encapsulados: SOIC-14

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ALD1103SBL datasheet

 7.1. Size:66K  ald
ald1103.pdf pdf_icon

ALD1103SBL

ADVANCED LINEAR DEVICES, INC. ALD1103 DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrors transistor pair intended for a broad range of analog applications. These Complementary push-pull linear drives enhancement-mode transistors are manufactured wit

 8.1. Size:75K  ald
ald1101.pdf pdf_icon

ALD1103SBL

ADVANCED LINEAR ALD1101A/ALD1101B DEVICES, INC. ALD1101 DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION APPLICATIONS The ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrors intended for a broad range of analog applications. These enhancement- Precision current sources mode transistors are manufactured with Advanced Linear Devices' en-

 8.2. Size:103K  ald
ald110808-series.pdf pdf_icon

ALD1103SBL

TM ADVANCED EPAD LINEAR DEVICES, INC. ALD110808/ALD110808A/ALD110908/ALD110908A QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD VGS(th)= +0.80V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrors dual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour

 8.3. Size:104K  ald
ald110814 ald110914.pdf pdf_icon

ALD1103SBL

TM ADVANCED EPAD LINEAR DEVICES, INC. ALD110814/ALD110914 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD VGS(th)= +1.40V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrors Channel MOSFETs matched at the factory using ALD s proven EPAD Precision current sources CMOS technol

Otros transistores... ALD1102ASAL , ALD1102BPAL , ALD1102BSAL , ALD1102DA , ALD1102PAL , ALD1102SAL , ALD1103DB , ALD1103PBL , MMIS60R580P , ALD1105DB , ALD1105PBL , ALD1105SBL , ALD1106DB , ALD1106PBL , ALD1106SBL , ALD1116DA , ALD1116PAL .

 

 

 


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