ALD1103SBL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ALD1103SBL
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.04 A
Tjⓘ - Temperatura máxima de unión: 70 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 75 Ohm
Paquete / Cubierta: SOIC-14
Búsqueda de reemplazo de ALD1103SBL MOSFET
ALD1103SBL Datasheet (PDF)
ald1103.pdf

ADVANCEDLINEARDEVICES, INC.ALD1103DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1103 is a monolithic dual N-channel and dual P-channel matched Precision current mirrorstransistor pair intended for a broad range of analog applications. These Complementary push-pull linear drivesenhancement-mode transistors are manufactured wit
ald1101.pdf

ADVANCEDLINEAR ALD1101A/ALD1101BDEVICES, INC.ALD1101DUAL N-CHANNEL MATCHED MOSFET PAIRGENERAL DESCRIPTION APPLICATIONSThe ALD1101 is a monolithic dual N-channel matched transistor pair Precision current mirrorsintended for a broad range of analog applications. These enhancement- Precision current sourcesmode transistors are manufactured with Advanced Linear Devices' en-
ald110808-series.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110808/ALD110808A/ALD110908/ALD110908AQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +0.80VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ Precision current mirrorsdual enhancement mode N-Channel MOSFETs matched at the factory Precision current sour
ald110814 ald110914.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD110814/ALD110914QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +1.40VMATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSALD110814/ALD110914 are monolithic quad/dual enhancement mode N- Precision current mirrorsChannel MOSFETs matched at the factory using ALDs proven EPAD Precision current sourcesCMOS technol
Otros transistores... ALD1102ASAL , ALD1102BPAL , ALD1102BSAL , ALD1102DA , ALD1102PAL , ALD1102SAL , ALD1103DB , ALD1103PBL , 2N7002 , ALD1105DB , ALD1105PBL , ALD1105SBL , ALD1106DB , ALD1106PBL , ALD1106SBL , ALD1116DA , ALD1116PAL .
History: FDPF39N20TLDTU | IXFP72N20X3M | IXFY36N20X3 | IRLB8748PBF | TPN6R303NC | HUF75345S3 | PS0151
History: FDPF39N20TLDTU | IXFP72N20X3M | IXFY36N20X3 | IRLB8748PBF | TPN6R303NC | HUF75345S3 | PS0151



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
mp38 transistor | 2sc2389 | b331 transistor | 2sa720 | 2sc1345 | 2sd555 | a950 transistor | k2611