ALD1116DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ALD1116DA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 0.0048 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
Paquete / Cubierta: DIP-8
Búsqueda de reemplazo de ALD1116DA MOSFET
ALD1116DA Datasheet (PDF)
ald1106 ald1116.pdf

ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in
ald1115.pdf

ADVANCEDLINEARALD1115DEVICES, INC.COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFETAPPLICATIONSGENERAL DESCRIPTION Precision current mirrorsThe ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drivestransistor pair intended for a broad range of analog applications. These Discrete analog switchesenhancement-mode transistors
ald111933.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD111933DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +3.3VMATCHED PAIR MOSFET ARRAYAPPLICATIONSGENERAL DESCRIPTIONALD111933 are monolithic dual N-Channel MOSFETs matched at the Precision current mirrorsfactory using ALDs proven EPAD CMOS technology. These devices are Precision current sourcesintended for low voltage, s
ald1108e ald1110e.pdf

ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building
Otros transistores... ALD1103PBL , ALD1103SBL , ALD1105DB , ALD1105PBL , ALD1105SBL , ALD1106DB , ALD1106PBL , ALD1106SBL , IRFZ44N , ALD1116PAL , ALD1116SAL , IRFB11N50APBF , IRFB13N50A , IRFB13N50APBF , IRFB16N50K , IRFB16N50KPBF , IRFB16N60LPBF .
History: FA57SA50LCP | AOCA24106E | SM2202NSQG
History: FA57SA50LCP | AOCA24106E | SM2202NSQG



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