ALD1116DA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ALD1116DA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.0048 A
   Tjⓘ - Temperatura máxima de unión: 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
   Paquete / Cubierta: DIP-8

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ALD1116DA Datasheet (PDF)

7.1. Size:100K ald
ald1106 ald1116.pdf

ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in

8.1. Size:80K ald
ald1115.pdf

ADVANCEDLINEARALD1115DEVICES, INC.COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFETAPPLICATIONSGENERAL DESCRIPTION Precision current mirrorsThe ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drivestransistor pair intended for a broad range of analog applications. These Discrete analog switchesenhancement-mode transistors

8.2. Size:411K ald
ald111933.pdf

TMADVANCEDEPADLINEARDEVICES, INC.ALD111933DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +3.3VMATCHED PAIR MOSFET ARRAYAPPLICATIONSGENERAL DESCRIPTIONALD111933 are monolithic dual N-Channel MOSFETs matched at the Precision current mirrorsfactory using ALDs proven EPAD CMOS technology. These devices are Precision current sourcesintended for low voltage, s

8.3. Size:54K ald
ald1108e ald1110e.pdf

ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building

8.4. Size:46K ald
ald1107 ald1117.pdf

ADVANCEDLINEARALD1107/ALD1117DEVICES, INC.QUAD/DUAL P-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTION APPLICATIONSThe ALD1107/ALD1117 are monolithic quad/dual P-channel enhance- Precision current sourcesment mode matched MOSFET transistor arrays intended for a broad range Precision current mirrorsof precision analog applications. The ALD1107/ALD1117 offer high input

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