ALD1116SAL Todos los transistores

 

ALD1116SAL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ALD1116SAL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 10 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.0048 A
   Tjⓘ - Temperatura máxima de unión: 70 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 500 Ohm
   Paquete / Cubierta: SOIC-8
     - Selección de transistores por parámetros

 

ALD1116SAL Datasheet (PDF)

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ALD1116SAL

ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAYGENERAL DESCRIPTIONAPPLICATIONSThe ALD1106/ALD1116 are monolithic quad/dual N-channel enhance- Precision current mirrorsment mode matched MOSFET transistor arrays intended for a broad range Precision current sourcesof precision analog applications. The ALD1106/ALD1116 offer high in

 8.1. Size:80K  ald
ald1115.pdf pdf_icon

ALD1116SAL

ADVANCEDLINEARALD1115DEVICES, INC.COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFETAPPLICATIONSGENERAL DESCRIPTION Precision current mirrorsThe ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drivestransistor pair intended for a broad range of analog applications. These Discrete analog switchesenhancement-mode transistors

 8.2. Size:411K  ald
ald111933.pdf pdf_icon

ALD1116SAL

TMADVANCEDEPADLINEARDEVICES, INC.ALD111933DUAL N-CHANNEL ENHANCEMENT MODE EPADVGS(th)= +3.3VMATCHED PAIR MOSFET ARRAYAPPLICATIONSGENERAL DESCRIPTIONALD111933 are monolithic dual N-Channel MOSFETs matched at the Precision current mirrorsfactory using ALDs proven EPAD CMOS technology. These devices are Precision current sourcesintended for low voltage, s

 8.3. Size:54K  ald
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ALD1116SAL

ADVANCEDLINEARALD1108E/ALD1110EDEVICES, INC.QUAD/DUAL EPAD PRECISION MATCHED PAIR N-CHANNEL MOSFET ARRAYFEATURES BENEFITS Electrically Programmable Analog Device Precision matched electrically after packagingCMOS Technology Simple, elegant single-chip user option Operates from 2V, 3V, 5V to 10V to trim voltage/current values Flexible basic circuit building

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS-G | NVD14N03R

 

 
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