IRFB16N60LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB16N60LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 44 nS
   Cossⓘ - Capacitancia de salida: 26 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TO-220

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IRFB16N60LPBF Datasheet (PDF)

..1. Size:211K international rectifier
irfb16n60lpbf.pdf

PD - 95471SMPS MOSFETIRFB16N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

..2. Size:865K vishay
irfb16n60lpbf.pdf

IRFB16N60L, SiHFB16N60LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Super Fast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS*COMPLIANT Lower Gate Charge Results in Simpler DriveQg (Max.) (nC) 100RequirementsQgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness

4.1. Size:551K international rectifier
irfb16n60l.pdf

FOR REVIEW ONLYPD - TBDPD - 94631SMPS MOSFETIRFB16N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 16A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS appli

7.1. Size:206K international rectifier
irfb16n50kpbf.pdf

PD - 95619SMPS MOSFETIRFB16N50KPbFApplicationsl Switch Mode Power Supply (SMPS)HEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power SwitchingVDSS RDS(on) typ. IDl Hard Switched and High FrequencyCircuits500V 285m 17Al Lead-FreeBenefitsl Low Gate Charge Qg results in Simple DriveRequirementl Improved Gate, Avalanche and Dynamicdv/dt SDRuggedne

7.2. Size:165K vishay
irfb16n50k irfb16n50kpbf.pdf

IRFB16N50K, SiHFB16N50KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.285RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 89 COMPLIANTRuggednessQgs (nC) 27 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 43and CurrentCon

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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