IRFB16N60LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB16N60LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 310 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 44 nS
Cossⓘ - Capacitancia de salida: 26 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de IRFB16N60LPBF MOSFET
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IRFB16N60LPBF datasheet
irfb16n60lpbf.pdf
PD - 95471 SMPS MOSFET IRFB16N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.
irfb16n60lpbf.pdf
IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* COMPLIANT Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 100 Requirements Qgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness
irfb16n60l.pdf
FOR REVIEW ONLY PD - TBD PD - 94631 SMPS MOSFET IRFB16N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS appli
irfb16n50kpbf.pdf
PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l Switch Mode Power Supply (SMPS) HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) typ. ID l Hard Switched and High Frequency Circuits 500V 285m 17A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt S D Ruggedne
Otros transistores... ALD1116DA , ALD1116PAL , ALD1116SAL , IRFB11N50APBF , IRFB13N50A , IRFB13N50APBF , IRFB16N50K , IRFB16N50KPBF , IRFP460 , IRFB17N20D , IRFB17N20DPBF , IRFB17N50L , IRFB17N50LPBF , IRFB17N60K , IRFB17N60KPBF , IRFB18N50K , IRFB18N50KPBF .
History: 2SJ620 | IRFB17N60K | IXFK50N50 | STD110N02R | FDB2532F085 | EFC4K105NUZ | 2SK1529
History: 2SJ620 | IRFB17N60K | IXFK50N50 | STD110N02R | FDB2532F085 | EFC4K105NUZ | 2SK1529
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