IRFB17N50L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB17N50L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 220 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 130 nC
   trⓘ - Tiempo de subida: 51 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB17N50L Datasheet (PDF)

..1. Size:189K international rectifier
irfb17n50lpbf.pdf

PD - 95123IRFB17N50LPbFSMPS MOSFETHEXFET Power MOSFETAppIicationsl Switch Mode Power Supply (SMPS)l Uninterruptible Power SupplyVDSS RDS(on) typ. IDl High Speed Power Switching500V 0.28 16Al ZVS and High Frequency Circuitl PWM Invertersl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Rugged

..2. Size:82K international rectifier
irfb17n50l.pdf

PD - 94084AIRFB17N50LSMPS MOSFETHEXFET Power MOSFETApplications Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching500V 0.28 16A ZVS and High Frequency Circuit PWM InvertersBenefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

..3. Size:211K vishay
irfb17n50l irfb17n50lpbf sihfb17n50l.pdf

IRFB17N50L, SiHFB17N50LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 130COMPLIANTRuggednessQgs (nC) 33 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 59and CurrentCo

..4. Size:210K vishay
irfb17n50l sihfb17n50l.pdf

..5. Size:284K inchange semiconductor
irfb17n50l.pdf

iscN-Channel MOSFET Transistor IRFB17N50LFEATURESLow drain-source on-resistance:RDS(ON) =0.32 (MAX)Enhancement mode:Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

7.1. Size:278K international rectifier
irfb17n20dpbf irfsl17n20dpbf.pdf

PD- 95325IRFB17N20DPbF IRFS17N20DPbFSMPS MOSFET IRFSL17N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.17 16Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanch

7.2. Size:140K international rectifier
irfb17n20d irfs17n20d irfsl17n20d.pdf

PD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters200V 0.17 16ABenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand CurrentT

7.3. Size:486K international rectifier
irfb17n60k.pdf

PD - 95629IRFB17N60KPbF Lead-Free8/4/04Document Number: 91099 www.vishay.com1IRFB17N60KPbFDocument Number: 91099 www.vishay.com2IRFB17N60KPbFDocument Number: 91099 www.vishay.com3IRFB17N60KPbFDocument Number: 91099 www.vishay.com4IRFB17N60KPbFDocument Number: 91099 www.vishay.com5IRFB17N60KPbFDocument Number: 91099 www.vishay.com6IRFB17N60KPbF

7.4. Size:1018K vishay
irfb17n60k irfb17n60kpbf.pdf

IRFB17N60K, SiHFB17N60KVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Smaller TO-220 PackageVDS (V) 600Available Low Gate Charge Qg Results in Simple DriveRDS(on) ()VGS = 10 V 0.35RoHS*RequirementQg (Max.) (nC) 99COMPLIANT Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 32RuggednessQgd (nC) 47 Fully Characterized Capacitance and Avalanc

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