IRFB18N50K Todos los transistores

 ..1. Size:83K  international rectifier
 irfb18n50k.pdf

PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized

 ..2. Size:177K  international rectifier
 irfb18n50kpbf.pdf

SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 ..3. Size:168K  vishay
 irfb18n50k.pdf

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con

 ..4. Size:223K  vishay
 irfb18n50k sihfb18n50k.pdf

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con

 9.1. Size:189K  international rectifier
 irfb17n50lpbf.pdf

PD - 95123 IRFB17N50LPbF SMPS MOSFET HEXFET Power MOSFET AppIications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply VDSS RDS(on) typ. ID l High Speed Power Switching 500V 0.28 16A l ZVS and High Frequency Circuit l PWM Inverters l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rugged

 9.2. Size:551K  international rectifier
 irfb16n60l.pdf

FOR REVIEW ONLY PD - TBD PD - 94631 SMPS MOSFET IRFB16N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS appli

 9.3. Size:189K  international rectifier
 irfb13n50apbf.pdf

PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanch

 9.4. Size:211K  international rectifier
 irfb16n60lpbf.pdf

PD - 95471 SMPS MOSFET IRFB16N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 9.5. Size:278K  international rectifier
 irfb17n20dpbf irfsl17n20dpbf.pdf

PD- 95325 IRFB17N20DPbF IRFS17N20DPbF SMPS MOSFET IRFSL17N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17 16A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch

 9.6. Size:206K  international rectifier
 irfb16n50kpbf.pdf

PD - 95619 SMPS MOSFET IRFB16N50KPbF Applications l Switch Mode Power Supply (SMPS) HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching VDSS RDS(on) typ. ID l Hard Switched and High Frequency Circuits 500V 285m 17A l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt S D Ruggedne

 9.7. Size:140K  international rectifier
 irfb17n20d irfs17n20d irfsl17n20d.pdf

PD- 93902A IRFB17N20D IRFS17N20D SMPS MOSFET IRFSL17N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

 9.8. Size:82K  international rectifier
 irfb17n50l.pdf

PD - 94084A IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Character

 9.9. Size:486K  international rectifier
 irfb17n60k.pdf

PD - 95629 IRFB17N60KPbF Lead-Free 8/4/04 Document Number 91099 www.vishay.com 1 IRFB17N60KPbF Document Number 91099 www.vishay.com 2 IRFB17N60KPbF Document Number 91099 www.vishay.com 3 IRFB17N60KPbF Document Number 91099 www.vishay.com 4 IRFB17N60KPbF Document Number 91099 www.vishay.com 5 IRFB17N60KPbF Document Number 91099 www.vishay.com 6 IRFB17N60KPbF

 9.10. Size:202K  international rectifier
 irfb11n50a.pdf

PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

 9.11. Size:184K  international rectifier
 irfb11n50apbf.pdf

PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.52 11A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

 9.12. Size:97K  international rectifier
 irfb13n50a.pdf

PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

 9.13. Size:211K  vishay
 irfb17n50l irfb17n50lpbf sihfb17n50l.pdf

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

 9.14. Size:1018K  vishay
 irfb17n60k irfb17n60kpbf.pdf

IRFB17N60K, SiHFB17N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Smaller TO-220 Package VDS (V) 600 Available Low Gate Charge Qg Results in Simple Drive RDS(on) ( )VGS = 10 V 0.35 RoHS* Requirement Qg (Max.) (nC) 99 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 32 Ruggedness Qgd (nC) 47 Fully Characterized Capacitance and Avalanc

 9.15. Size:201K  vishay
 irfb13n50a sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 9.16. Size:201K  vishay
 irfb13n50a irfb13n50apbf sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) ( )VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuratio

 9.17. Size:165K  vishay
 irfb16n50k irfb16n50kpbf.pdf

IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.285 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 89 COMPLIANT Ruggedness Qgs (nC) 27 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 43 and Current Con

 9.18. Size:865K  vishay
 irfb16n60lpbf.pdf

IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Super Fast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* COMPLIANT Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 100 Requirements Qgs (nC) 30 Enhanced dV/dt Capabilities Offer Improved Ruggedness

 9.19. Size:137K  vishay
 irfb11n50a sihfb11n50a.pdf

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

 9.20. Size:163K  vishay
 irfb11n50apbf.pdf

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.52 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 52 COMPLIANT Ruggedness Qgs (nC) 13 Fully Characterized Capacitance and Qgd (nC) 18 Avalanche Voltage and current Confi

 9.21. Size:210K  vishay
 irfb17n50l sihfb17n50l.pdf

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.28 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 130 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 59 and Current Co

 9.22. Size:156K  infineon
 irfb13n50a sihfb13n50a.pdf

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Available Reqirements RDS(on) ( )VGS = 10 V 0.450 RoHS* Qg (Max.) (nC) 81 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qgs (nC) 20 Ruggedness Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration

 9.23. Size:284K  inchange semiconductor
 irfb17n50l.pdf

iscN-Channel MOSFET Transistor IRFB17N50L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

 9.24. Size:284K  inchange semiconductor
 irfb13n50a.pdf

iscN-Channel MOSFET Transistor IRFB13N50A FEATURES Low drain-source on-resistance RDS(ON) =0.45 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL