IRFB20N50K Todos los transistores

 ..1. Size:183K  international rectifier
 irfb20n50k.pdf

PD - 94418A IRFB20N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Charact

 ..2. Size:217K  international rectifier
 irfb20n50kpbf.pdf

PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET AppIications VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

 ..3. Size:858K  vishay
 irfb20n50k sihfb20n50k.pdf

IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.21 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 110 COMPLIANT Ruggedness Qgs (nC) 33 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Conf

 9.1. Size:170K  international rectifier
 irfb260npbf.pdf

PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.040 56A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB Ab

 9.2. Size:278K  international rectifier
 irfb23n15dpbf irfs23n15dpbf irfsl23n15dpbf.pdf

PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.090 23A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 l F

 9.3. Size:142K  international rectifier
 irfs23n15d irfb23n15d irfsl23n15d.pdf

PD - 93894A IRFB23N15D IRFS23N15D SMPS MOSFET IRFSL23N15D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.090 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalan

 9.4. Size:278K  international rectifier
 irfb23n15dpbf irfsl23n15dpbf.pdf

PD - 95535 IRFB23N15DPbF IRFS23N15DPbF SMPS MOSFET IRFSL23N15DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.090 23A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 l F

 9.5. Size:275K  international rectifier
 irfb23n20dpbf irfs23n20dpbf irfsl23n20dpbf.pdf

PD - 95536 IRFB23N20DPbF IRFS23N20DPbF SMPS MOSFET IRFSL23N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.10 24A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

 9.6. Size:90K  international rectifier
 irfb260n.pdf

PD - 94270 SMPS MOSFET IRFB260N HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.040 56A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-220AB Absolute Maximum Ratin

 9.7. Size:279K  international rectifier
 irfb23n20dpbf irfs23n20dpbf.pdf

PD - 95536 IRFB23N20DPbF IRFS23N20DPbF SMPS MOSFET IRFSL23N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.10 24A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanc

 9.8. Size:196K  international rectifier
 irfb23n20d.pdf

PD- 93904A IRFB23N20D IRFS23N20D SMPS MOSFET IRFSL23N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.10 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current T

 9.9. Size:844K  cn vbsemi
 irfb23n15d.pdf

IRFB23N15D www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise no

 9.10. Size:245K  inchange semiconductor
 irfb260n.pdf

isc N-Channel MOSFET Transistor IRFB260N IIRFB260N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fully Characterized Avalanche Voltage and Current ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.11. Size:227K  inchange semiconductor
 irfb23n15d.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB23N15D IIRFB23N15D FEATURES Static drain-source on-resistance RDS(on) 90m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a