IRFB3206PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB3206PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 82 nS
Cossⓘ - Capacitancia de salida: 720 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO-220AB
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IRFB3206PBF Datasheet (PDF)
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD
irfb3206pbf irfs3206pbf irfsl3206pbf.pdf
IRFB3206PbFIRFS3206PbFIRFSL3206PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous RectificationDVDSS60Vin SMPSRDS(on) typ.2.4ml Uninterruptible Power Supply max. 3.0ml High Speed Power Switchingl Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A Benefits Sl Improved Gate, Avalanche and DynamicD
irfb3206gpbf.pdf
PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness
irfb3206gpbf.pdf
PD - 96210IRFB3206GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.2.4ml Uninterruptible Power Supplyl High Speed Power Switching max. 3.0ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 210A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggedness
irfb3206.pdf
isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHard Switched and Hi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918