IRFB3306GPBF Todos los transistores

 

IRFB3306GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB3306GPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TO-220AB
     - Selección de transistores por parámetros

 

IRFB3306GPBF Datasheet (PDF)

 ..1. Size:292K  international rectifier
 irfb3306gpbf.pdf pdf_icon

IRFB3306GPBF

PD - 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

 6.1. Size:327K  international rectifier
 irfb3306pbf irfs3306pbf irfsl3306pbf.pdf pdf_icon

IRFB3306GPBF

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

 6.2. Size:245K  inchange semiconductor
 irfb3306.pdf pdf_icon

IRFB3306GPBF

isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed pow

 7.1. Size:243K  international rectifier
 irfb3307zgpbf.pdf pdf_icon

IRFB3306GPBF

PD - 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

MOSTRAR MÁS

Otros transistores... IRFB3077GPBF , IRFB3077PBF , IRFB31N20DPBF , IRFB3206GPBF , IRFB3206PBF , IRFB3207PBF , IRFB3207ZGPBF , IRFB3207ZPBF , AO4407 , IRFB3306PBF , IRFB3307PBF , IRFB3307ZPBF , IRFB33N15DPBF , IRFB3407ZPBF , IRFB3507PBF , IRFB3607GPBF , IRFB3607PBF .

History: IXTP50N28T | 3SK249

 

 
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