IRFB4229PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 97078AIRFB4229PbFFeaturesl Advanced Process TechnologyKey Parametersl Key Parameters Optimized for PDP Sustain,VDS min250 V Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ.300 Vl Low EPULSE Rating to Reduce PowerRDS(ON) typ. @ 10V m38 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C and Pass Switch Applications 91 Al Low QG f

isc N-Channel MOSFET Transistor IRFB4229IIRFB4229FEATURESStatic drain-source on-resistance:RDS(on) 46mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

PD - 97035DIRFB4227PbFFeaturesKey Parametersl Advanced Process TechnologyVDS max 200 Vl Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch ApplicationsVDS (Avalanche) typ. 240 Vl Low EPULSE Rating to Reduce PowermRDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C 130 A and Pass Switch ApplicationsTJ max 17

PD - 97227AIRFB4228PbFPDP SWITCHFeaturesKey Parametersl Advanced Process TechnologyVDS min150 Vl Key Parameters Optimized for PDP Sustain,VDS (Avalanche) typ.180 V Energy Recovery and Pass Switch ApplicationsRDS(ON) typ. @ 10V ml Low EPULSE Rating to Reduce Power 12 Dissipation in PDP Sustain, Energy RecoveryIRP max @ TC= 100C170 A and Pass Switch Application

isc N-Channel MOSFET Transistor IRFB4228IIRFB4228FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor IRFB4227IIRFB4227FEATURESStatic drain-source on-resistance:RDS(on) 24mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175 operating junction temperature and high repetitive peakcurrent capabilityABSOLUTE MAXIMUM