IRFB52N15DPBF Todos los transistores

 ..1. Size:325K  international rectifier
 irfb52n15dpbf irfs52n15dpbf.pdf

PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 150 V VDS (Avalanche) min. 200 V Benefits RDS(ON) max @ 10V 32 m l Low Gate-to-Drain Charge to TJ max Reduce Switching Losses 175 C l Fully Characterized Capacitance Including Effective COSS to Simplify Design

 ..2. Size:325K  international rectifier
 irfb52n15dpbf irfs52n15dpbf irfsl52n15dpbf.pdf

PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF Applications HEXFET Power MOSFET l High frequency DC-DC converters Key Parameters l Plasma Display Panel VDS 150 V VDS (Avalanche) min. 200 V Benefits RDS(ON) max @ 10V 32 m l Low Gate-to-Drain Charge to TJ max Reduce Switching Losses 175 C l Fully Characterized Capacitance Including Effective COSS to Simplify Design

 4.1. Size:245K  inchange semiconductor
 irfb52n15d.pdf

isc N-Channel MOSFET Transistor IRFB52N15D,IIRFB52N15D FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.1. Size:272K  international rectifier
 irfb5615pbf.pdf

PD - 96173 DIGITAL AUDIO MOSFET IRFB5615PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 150 V Amplifier Applications RDS(ON) typ. @ 10V m 32 Low RDSON for Improved Efficiency Qg typ. 26 nC Qsw typ. Low QG and QSW for Better THD and Improved 11 nC RG(int) typ. 2.7 Efficiency TJ max 175 C Low QRR for Better THD and Lower EMI

 9.2. Size:227K  international rectifier
 irfb59n10dpbf irfs59n10dpbf.pdf

PD - 95378 IRFB59N10DPbF IRFS59N10DPbF SMPS MOSFET IRFSL59N10DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l UPS / Motor Control Inverters 100V 0.025 59A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1

 9.3. Size:268K  international rectifier
 irfb5620pbf.pdf

PD - 96174 DIGITAL AUDIO MOSFET IRFB5620PbF Features Key Parameters Key Parameters Optimized for Class-D Audio VDS 200 V Amplifier Applications RDS(ON) typ. @ 10V m 60 Low RDSON for Improved Efficiency Qg typ. 25 nC Low QG and QSW for Better THD and Improved Qsw typ. 9.8 nC RG(int) typ. 2.6 Efficiency TJ max 175 C Low QRR for Better THD and Lower EM

 9.4. Size:227K  international rectifier
 irfb59n10dpbf irfs59n10dpbf irfsl59n10dpbf.pdf

PD - 95378 IRFB59N10DPbF IRFS59N10DPbF SMPS MOSFET IRFSL59N10DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l UPS / Motor Control Inverters 100V 0.025 59A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1

 9.5. Size:618K  cn evvo
 irfb5615.pdf

IRFB5615 N-Ch 150V Fast Switching MOSFETs General Description Product Summary Advanced Trench MOS Technology BVDSS RDSON ID Low Gate Charge 150V 13m 85A Low R DS(ON) 100% EAS Guaranteed Green Device Available TO220 Pin Configuration Applications Load Switch LED Applications Networking Applications Quick Charger Absolute Max

 9.6. Size:815K  cn vbsemi
 irfb59n10d.pdf

IRFB59N10D www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.018 at VGS = 10 V 100 70a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G G D S S Top View N-Channel MOSFET ABSOLUTE

 9.7. Size:246K  inchange semiconductor
 irfb59n10d.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB59N10D IIRFB59N10D FEATURES Static drain-source on-resistance RDS(on) 0.025 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MA

 9.8. Size:244K  inchange semiconductor
 irfb5620.pdf

isc N-Channel MOSFET Transistor IRFB5620 IIRFB5620 FEATURES Static drain-source on-resistance RDS(on) 72.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATIN

 9.9. Size:245K  inchange semiconductor
 irfb5615.pdf

isc N-Channel MOSFET Transistor IRFB5615 IIRFB5615 FEATURES Static drain-source on-resistance RDS(on) 39m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM