IRFBA22N50APBF Todos los transistores

 

IRFBA22N50APBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFBA22N50APBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 340 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 115 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: TO-273AA
 

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IRFBA22N50APBF Datasheet (PDF)

 ..1. Size:130K  international rectifier
irfba22n50apbf.pdf pdf_icon

IRFBA22N50APBF

PD-91886CIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptible Power Supply 500V 0.23 24Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage an

 3.1. Size:106K  international rectifier
irfba22n50a.pdf pdf_icon

IRFBA22N50APBF

PD-91866BIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23 24A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curr

 9.1. Size:199K  international rectifier
irfba1404ppbf.pdf pdf_icon

IRFBA22N50APBF

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

 9.2. Size:117K  international rectifier
irfba90n20d.pdf pdf_icon

IRFBA22N50APBF

PD - 94300ASMPS MOSFETIRFBA90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageSuper-220and CurrentAbso

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