IRFBA90N20DPBF Todos los transistores

 

IRFBA90N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFBA90N20DPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 650 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 98 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 160 nC
   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 1040 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO-273AA

 Búsqueda de reemplazo de MOSFET IRFBA90N20DPBF

 

IRFBA90N20DPBF Datasheet (PDF)

 ..1. Size:133K  international rectifier
irfba90n20dpbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 95902SMPS MOSFETIRFBA90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Super-220l Fully Characterized Avalanche Voltageand

 ..2. Size:133K  infineon
irfba90n20dpbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 95902SMPS MOSFETIRFBA90N20DPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98Al Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Super-220l Fully Characterized Avalanche Voltageand

 3.1. Size:117K  international rectifier
irfba90n20d.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 94300ASMPS MOSFETIRFBA90N20DHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl High frequency DC-DC converters200V 0.023 98ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche VoltageSuper-220and CurrentAbso

 9.1. Size:199K  international rectifier
irfba1404ppbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

 9.2. Size:238K  international rectifier
irfba1405p.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD -94111AUTOMOTIVE MOSFETIRFBA1405PTypical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper ControlD Climate ControlVDSS = 55V Power DoorBenefits Advanced Process TechnologyRDS(on) = 5.0m Ultra Low On-ResistanceG Dynamic dv/dt RatingID = 174AV 175C Operating TemperatureS Fast Switching Repetitiv

 9.3. Size:211K  international rectifier
auirfba1405.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD-97768AUTOMOTIVE GRADEAUIRFBA1405HEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS 55Vl Low On-ResistanceRDS(on) typ. 4.3ml Dynamic dv/dt Ratingl 175C Operating Temperature max 5.0mGl Fast SwitchingID (Silicon Limited) 174Al Fully Avalanche RatedID (Package Limited) 95Al Repetitive Avalanche Allowed Sup to Tjmaxl Lead-Free, RoHS

 9.4. Size:41K  international rectifier
irfba31n50l.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD- 93925PROVISIONALIRFBA31N50LSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS Motor Control500V 0.152 31A UninterruptIble Power SupplyBenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Built in Fast Recovery Diode Improved Avalanche Ruggedness and

 9.5. Size:41K  international rectifier
irfba32n50k.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD- 93924PROVISIONALIRFBA32N50KSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply500V 0.14 32ABenefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to ImprovedGate Charge Characteristics Improved Avalanche Ruggedness andDynamic dv/dt, Fully CharacterizedAvalanche Vo

 9.6. Size:53K  international rectifier
irfba34n50c.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD- 93931PROVISIONALIRFBA34N50CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.070 40A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andSuper-220

 9.7. Size:130K  international rectifier
irfba22n50apbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD-91886CIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptible Power Supply 500V 0.23 24Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage an

 9.8. Size:213K  international rectifier
irfba1405ppbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti

 9.9. Size:106K  international rectifier
irfba22n50a.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD-91866BIRFBA22N50ASMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23 24A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curr

 9.10. Size:48K  international rectifier
irfba35n60c.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 93800APROVISIONALIRFBA35N60CSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 600V 0.080 35A High Speed Power SwitchingBenefits Low Gate Charge Qg Reduces DriveRequired Improved Gate Resistance for FasterSwitching Fully Characterized Capacitance andAvalanche Voltage and Current Sup

 9.11. Size:115K  international rectifier
irfba1404.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 93806AUTOMOTIVE MOSFETIRFBA1404PTypical ApplicationsHEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electric Power Steering (EPS) Electric BrakingDVDSS = 40V Radiator Fan ControlBenefits Advanced Process TechnologyRDS(on) = 3.7m Ultra Low On-ResistanceG Increase Current Handling CapabilityID = 206A 175C Operating TemperatureS Fast Switchi

 9.12. Size:199K  infineon
irfba1404ppbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD - 95903AIRFBA1404PPbFHEXFET Power MOSFETTypical Applications Industrial Motor DriveDVDSS = 40VBenefitsRDS(on) = 3.7ml Advanced Process TechnologyGl Ultra Low On-ResistanceID = 206Al Increase Current Handling CapabilitySl 175C Operating Temperaturel Fast Switchingl Dynamic dv/dt Ratingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescri

 9.13. Size:216K  infineon
irfba1405ppbf.pdf

IRFBA90N20DPBF
IRFBA90N20DPBF

PD -95152AIRFBA1405PPbFTypical Applications Industrial Motor Drive HEXFET Power MOSFETDBenefitsVDSS = 55Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.0ml Dynamic dv/dt RatingGl 175C Operating Temperaturel Fast Switching ID = 174ASl Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFETs uti

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