IRFBC20LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBC20LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 48 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: TO-262

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IRFBC20LPBF Datasheet (PDF)

..1. Size:396K international rectifier
irfbc20spbf irfbc20lpbf.pdf

PD - 95543IRFBC20S/LPbF Lead-Free7/21/04Document Number: 91007 www.vishay.com1IRFBC20S/LPbFDocument Number: 91007 www.vishay.com2IRFBC20S/LPbFDocument Number: 91007 www.vishay.com3IRFBC20S/LPbFDocument Number: 91007 www.vishay.com4IRFBC20S/LPbFDocument Number: 91007 www.vishay.com5IRFBC20S/LPbFDocument Number: 91007 www.vishay.com6IRFBC20S/LPbF

..2. Size:251K vishay
irfbc20lpbf.pdf

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S)VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)AvailableRDS(on) ()VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S)RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 18 150 C Operating TemperatureQg

6.1. Size:355K international rectifier
irfbc20s irfbc20l.pdf

PD - 9.1014IRFBC20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBC20S)D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt RatingRDS(on) = 4.4 150C Operating TemperatureG Fast SwitchingID = 2.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

6.2. Size:266K vishay
irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs

7.1. Size:171K international rectifier
irfbc20.pdf

7.2. Size:2081K international rectifier
irfbc20pbf.pdf

PD - 94985IRFBC20PbF Lead-Free2/5/04Document Number: 91006 www.vishay.com1IRFBC20PbFDocument Number: 91006 www.vishay.com2IRFBC20PbFDocument Number: 91006 www.vishay.com3IRFBC20PbFDocument Number: 91006 www.vishay.com4IRFBC20PbFDocument Number: 91006 www.vishay.com5IRFBC20PbFDocument Number: 91006 www.vishay.com6IRFBC20PbFTO-220AB Package Out

7.3. Size:1571K vishay
irfbc20pbf sihfbc20.pdf

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

7.4. Size:1568K vishay
irfbc20 sihfbc20.pdf

7.5. Size:1520K infineon
irfbc20 sihfbc20.pdf

7.6. Size:284K inchange semiconductor
irfbc20.pdf

iscN-Channel MOSFET Transistor IRFBC20FEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

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