IRFBC20LPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFBC20LPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 48 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
Encapsulados: TO-262
Búsqueda de reemplazo de IRFBC20LPBF MOSFET
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IRFBC20LPBF datasheet
irfbc20spbf irfbc20lpbf.pdf
PD - 95543 IRFBC20S/LPbF Lead-Free 7/21/04 Document Number 91007 www.vishay.com 1 IRFBC20S/LPbF Document Number 91007 www.vishay.com 2 IRFBC20S/LPbF Document Number 91007 www.vishay.com 3 IRFBC20S/LPbF Document Number 91007 www.vishay.com 4 IRFBC20S/LPbF Document Number 91007 www.vishay.com 5 IRFBC20S/LPbF Document Number 91007 www.vishay.com 6 IRFBC20S/LPbF
irfbc20lpbf.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S) VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L) Available RDS(on) ( )VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S) RoHS* Dynamic dV/dt Rating COMPLIANT Qg (Max.) (nC) 18 150 C Operating Temperature Qg
irfbc20s irfbc20l.pdf
PD - 9.1014 IRFBC20S/L PRELIMINARY HEXFET Power MOSFET Surface Mount (IRFBC20S) D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt Rating RDS(on) = 4.4 150 C Operating Temperature G Fast Switching ID = 2.2A Fully Avalanche Rated S Description Third generation HEXFETs from international Rectifier provide the designer
irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S) RDS(on) ( )VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S) Qg (Max.) (nC) 18 Dynamic dV/dt Rating Qgs
Otros transistores... IRFB61N15DPBF , IRFB9N30APBF , IRFB9N60APBF , IRFB9N65APBF , IRFBA1404PPBF , IRFBA1405PPBF , IRFBA22N50APBF , IRFBA90N20DPBF , IRFB7545 , IRFBC20PBF , IRFBC30AL , IRFBC30ALPBF , IRFBC30APBF , IRFBC30ASPBF , IRFBC30LPBF , IRFBC30PBF , IRFBC30SPBF .
History: WSP4016 | AOD423
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