IRFBC30ASPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBC30ASPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 23 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET IRFBC30ASPBF

IRFBC30ASPBF Datasheet (PDF)

..1. Size:302K international rectifier
irfbc30aspbf irfbc30alpbf.pdf

PD- 95534SMPS MOSFETIRFBC30AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalan

..2. Size:235K vishay
irfbc30al irfbc30alpbf irfbc30aspbf.pdf

IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 2.2 Low Gate Charge Qg Results in Simple DriveQg (Max.) (nC) 23RequirementQgs (nC) 5.4 Improved Gate, Avalanche and Dynamic dV/dtQgd (nC) 11 Ruggedness Fully Characterized Ca

5.1. Size:147K international rectifier
irfbc30as irfbc30al.pdf

PD- 91890BSMPS MOSFETIRFBC30AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 600V 2.2 3.6A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

5.2. Size:261K vishay
irfbc30as sihfbc30as irfbc30al sihfbc30al.pdf

6.1. Size:193K international rectifier
irfbc30a.pdf

PD - 95700SMPS MOSFETIRFBC30APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 600V 2.2 3.6Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanc

6.2. Size:216K vishay
irfbc30apbf sihfbc30a.pdf

IRFBC30A, SiHFBC30AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600AvailableRequirementRDS(on) ()VGS = 10 V 2.2RoHS* Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 23COMPLIANTRuggednessQgs (nC) 5.4 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 11and CurrentConfigur

6.3. Size:215K vishay
irfbc30a sihfbc30a.pdf

6.4. Size:284K inchange semiconductor
irfbc30a.pdf

iscN-Channel MOSFET Transistor IRFBC30AFEATURESLow drain-source on-resistance:RDS(ON) =2.2 (MAX)Enhancement mode:Vth = 2 to 4.5V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: