AM1323P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM1323P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.34 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 1.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 29 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: SC-70
Búsqueda de reemplazo de AM1323P MOSFET
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AM1323P datasheet
am1323p.pdf
Analog Power AM1323P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 150 @ VGS = -4.5V -1.3 Low thermal impedance -20 190 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications SC70-3 Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE
am1320n.pdf
Analog Power AM1320N N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 4.5 V 2.0 battery-powered products suc
am1321p.pdf
Analog Power AM1321P P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.079 @ VGS = -4.5V -1.7 converters and power management in portable and -20 battery-powered produc
Otros transistores... AM10P20-690D, AM110N06-08P, AM110P06-06B, AM110P08-11B, AM12N65P, AM12N65PCFM, AM1320N, AM1321P, IRF640, AM1330N, AM1331P, AM1340N, AM1360NE, AM1370N, AM1400NE, AM1420N, AM1421P
History: KNB2710A | KIA4750S-220
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