AM1431P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM1431P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.079 Ohm

Encapsulados: SC-70

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AM1431P datasheet

 ..1. Size:135K  analog power
 am1431p.pdf pdf_icon

AM1431P

Analog Power AM1431P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.112 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product

 9.1. Size:100K  analog power
 am1432ne.pdf pdf_icon

AM1431P

Analog Power AM1432NE N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.033 @ VGS = 10 V 5.7 battery-powered products su

 9.2. Size:64K  analog power
 am1433pe.pdf pdf_icon

AM1431P

Analog Power AM1433PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.064 @ VGS = -10V -4.1 converters and power management in portable and -30 battery-powered produc

 9.3. Size:143K  analog power
 am1430n.pdf pdf_icon

AM1431P

Analog Power AM1430N N-Channel 30V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.058 @ VGS = 10 V 4.3 battery-powered products such

MOSTRAR MÁS

Otros transistores... AM1331P, AM1340N, AM1360NE, AM1370N, AM1400NE, AM1420N, AM1421P, AM1430N, AON6414A, AM1432NE, AM1433PE, AM1434N, AM1440N, AM1523CE, AM1535CE, AM1537CE, AM1541CE