AM20N15-250D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AM20N15-250D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 16.7 nC
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.255 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET AM20N15-250D

AM20N15-250D Datasheet (PDF)

..1. Size:315K analog power
am20n15-250d.pdf

Analog Power AM20N15-250DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V12 Low thermal impedance 150290 @ VGS = 4.5V11 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

3.1. Size:323K analog power
am20n15-250b.pdf

Analog Power AM20N15-250BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)200 @ VGS = 10V Low thermal impedance 15021a225 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

8.1. Size:86K analog power
am20n10-250de.pdf

Analog Power AM20N10-250DEN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m) ID (A)(rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 280 @ VG = 10V 11Sconverters and power management in portable and 100355 @ VG = 4.5V

8.2. Size:305K analog power
am20n10-350d.pdf

Analog Power AM20N10-350DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)420 @ VGS = 10V9.0 Low thermal impedance 100460 @ VGS = 5.5V8.6 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

8.3. Size:287K analog power
am20n10-115d.pdf

Analog Power AM20N10-115DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)115 @ VGS = 10V17 Low thermal impedance 100135 @ VGS = 4.5V16 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

8.4. Size:289K analog power
am20n10-250d.pdf

Analog Power AM20N10-250DN-Channel 100-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V11 Low thermal impedance 100355 @ VGS = 4.5V10 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

8.5. Size:73K analog power
am20n10-130d.pdf

Analog Power AM20N10-130DN-Channel 100-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 130 @ VGS = 10V 17converters and power management in portable and 100160 @ VGS = 4.5V 15

8.6. Size:291K analog power
am20n10-180d.pdf

Analog Power AM20N10-180DN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)180 @ VGS = 10V14 Low thermal impedance 100190 @ VGS = 4.5V13 Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives ABSOLUTE MAXIMUM RATINGS (TA = 2

8.7. Size:859K cn vbsemi
am20n10-250d.pdf

AM20N10-250Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

8.8. Size:850K cn vbsemi
am20n10-130d.pdf

AM20N10-130Dwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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