IRLZ10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLZ10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Id|ⓘ - Corriente continua de drenaje: 6.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220

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IRLZ10 Datasheet (PDF)

..1. Size:51K 1
irlu010 irlz10 irlz20 irlz30 irlz40.pdf

9.1. Size:253K international rectifier
irlz14pbf.pdf

PD - 95457IRLZ14PbF Lead-Free6/23/04Document Number: 91325 www.vishay.com1IRLZ14PbFDocument Number: 91325 www.vishay.com2IRLZ14PbFDocument Number: 91325 www.vishay.com3IRLZ14PbFDocument Number: 91325 www.vishay.com4IRLZ14PbFDocument Number: 91325 www.vishay.com5IRLZ14PbFDocument Number: 91325 www.vishay.com6IRLZ14PbF+Circuit Layout Consider

9.2. Size:291K international rectifier
irlz14s irlz14l.pdf

PD - 9.903AIRLZ14S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRLZ14S) Low-profile through-hole (IRLZ14L) 175C Operating Temperature RDS(on) = 0.20G Fast SwitchingID = 10ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon a

9.3. Size:170K international rectifier
irlz14.pdf

9.4. Size:209K samsung
irlz14a.pdf

IRLZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute

9.5. Size:18K samsung
irlz1x irlz2x irlz3x irlz4x irl51x irl52x irl53x irl54x irl61x irl62x irl63x irl64x.pdf

9.6. Size:310K vishay
irlz14l irlz14s.pdf

IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.20 Surface Mount (IRLZ14S, SiHLZ14S)Qg (Max.) (nC) 8.4 Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)Qgs (nC) 3.5 175 C Operating Temperature Fast Sw

9.7. Size:337K vishay
irlz14spbf sihlz14l sihlz14s.pdf

9.8. Size:312K vishay
irlz14s irlz14l sihlz14s sihlz14l.pdf

9.9. Size:1084K vishay
irlz14 sihlz14.pdf

IRLZ14, SiHLZ14Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.20RoHS*Qg (Max.) (nC) 8.4 RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQgs (nC) 3.5 175 C Operating TemperatureQgd (nC) 6.0 Fast SwitchingConfiguration Single Ease of ParallelingD

9.10. Size:1086K vishay
irlz14pbf sihlz14.pdf

Otros transistores... IRLW610A , IRLW620A , IRLW630A , IRLW640A , IRLWZ14A , IRLWZ24A , IRLWZ34A , IRLWZ44A , IRFP260N , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRLZ24NL , IRLZ24NS .

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