AM2301PE Todos los transistores

 ..1. Size:84K  analog power
 am2301pe.pdf

Analog Power AM2301PE P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.130 @ VGS = -4.5V -2.6 -20 battery-powered product

 7.1. Size:306K  analog power
 am2301p.pdf

Analog Power AM2301P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 130 @ VGS = -4.5V -2.6 Low thermal impedance -20 190 @ VGS = -2.5V -2.2 Fast switching speed SOT-23 Typical Applications Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLE

 8.1. Size:336K  ait semi
 am2301.pdf

AiT Semiconductor Inc. AM2301 www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2301 is the P-Channel logic enhancement -20V/-3.2A, R =90m (typ.)@V =-4.5V DS(ON) GS mode power field effect transistor is produced using -20V/-2.0A, R =130m (typ.)@V =-2.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell de

 9.1. Size:290K  analog power
 am2308ne.pdf

Analog Power AM2308NE N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.5 Low thermal impedance 30 82 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA

 9.2. Size:286K  analog power
 am2305p.pdf

Analog Power AM2305P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Ci

 9.3. Size:188K  analog power
 am2306n.pdf

Analog Power AM2306N N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in p

 9.4. Size:232K  analog power
 am2300n.pdf

Analog Power AM2300N N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.035 @ VGS = 4.5V 4.3 20 power management circuitry. Typical 0.050 @ VGS = 2.5V 3.5 applications are DC-DC converters,

 9.5. Size:290K  analog power
 am2308n.pdf

Analog Power AM2308N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 60 @ VGS = 4.5V 3.8 Low thermal impedance 30 82 @ VGS = 2.5V 3.3 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.6. Size:299K  analog power
 am2305pe.pdf

Analog Power AM2305PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 43 @ VGS = -4.5V -4.5 Low thermal impedance -20 54 @ VGS = -2.5V -4.1 Fast switching speed 120 @ VGS = -1.8V -2.7 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion C

 9.7. Size:245K  analog power
 am2303p.pdf

Analog Power AM2303P P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A) rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9 dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -

 9.8. Size:302K  analog power
 am2307pe.pdf

Analog Power AM2307PE P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (m ) VDS (V) ID(A) 31 @ VGS = -4.5V -5.2 Key Features 44 @ VGS = -2.5V -4.4 Low r trench technology DS(on) -20 56 @ VGS = -1.8V -3.9 Low thermal impedance 83 @ VGS = -1.5V -3.2 Fast switching speed Typical Applications White LED boost converters Automotive Systems Indust

 9.9. Size:108K  analog power
 am2302ne.pdf

Analog Power AM2302NE N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical applications are DC-DC converters and 0.076 @ VGS = 4.5V 3.4 20 power management in portable and 0.103 @ VGS = 2.5V 2

 9.10. Size:304K  analog power
 am2304n.pdf

Analog Power AM2304N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 12 @ VGS = 10V 8.5 Low thermal impedance 30 18 @ VGS = 4.5V 7.0 Fast switching speed Typical Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATINGS (TA =

 9.11. Size:285K  analog power
 am2302n.pdf

Analog Power AM2302N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 76 @ VGS = 4.5V 3.4 Low thermal impedance 20 103 @ VGS = 2.5V 3.0 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.12. Size:206K  analog power
 am2306ne.pdf

Analog Power AM2306NE N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize PRODUCT SUMMARY High Cell Density process. Low rDS(on) assures VDS (V) rDS(on) m( )ID (A) minimal power loss and conserves energy, making this device ideal for use in power management 58 @ VGS = 10V 3.5 circuitry. Typical applications are PWMDC-DC 30 converters, power management in

 9.13. Size:549K  ait semi
 am2304.pdf

AiT Semiconductor Inc. AM2304 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2304 is available in a SOT-23 package. 30V/5.1A R = 25m (max.) @ V = 10V DS(ON) GS R = 35m (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Available in a SOT-23 package. ORDERING INFORMATION APPLICATION Power Management in Notebook Computer, Por

 9.14. Size:454K  ait semi
 am2303.pdf

AiT Semiconductor Inc. AM2303 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2303 is the P-Channel logic enhancement -30V/-4.3A, R =50m (typ.)@V =-10V DS(ON) GS mode power field effect transistor is produced using -30V/-3.5A, R =58m (typ.)@V =-4.5V DS(ON) GS high cell density. advanced trench technology to -30V/-2.5A, R =73m (typ.

 9.15. Size:468K  ait semi
 am2305.pdf

AiT Semiconductor Inc. AM2305 www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2305 is the P-Channel logic enhancement -30V/-4A, R = 55m @V = -10V DS(ON) GS mode power field effect transistor is produced using -30V/-3A, R = 64m @V = -4.5V DS(ON) GS high cell density. Advanced trench technology to -30V/-2A, R = 85m @V = -2.5V DS(ON)

 9.16. Size:443K  ait semi
 am2306.pdf

AiT Semiconductor Inc. AM2306 www.ait-ic.com -30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2306 is the N-Channel logic enhancement -30V/3.6A, R = 45m (typ.)@V = 10V DS(ON) GS mode power field effect transistor is produced using 30V/2.8A, R = 55m (typ.)@V = 4.5V DS(ON) GS high cell density. Advanced trench technology to Super high density cell desi

 9.17. Size:599K  ait semi
 am2308.pdf

AiT Semiconductor Inc. AM2308 www.ait-ic.com MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2308 is available in a SOT-23 package. 60V/2.7A, R = 104m (max.) @ V = 10V DS(ON) GS R = 130m (max.) @ V = 4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23 package. ORDERING INFORMATI

 9.18. Size:333K  ait semi
 am2300.pdf

AiT Semiconductor Inc. AM2300 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2300 is the N-Channel logic enhancement 20V/4.0A, R =26m (typ.)@V =4.5V DS(ON) GS mode power field effect transistor is produced using 20V/3.0A, R =31m (typ.)@V =2.5V DS(ON) GS high cell density. Advanced trench technology to 20V/2.0A, R =44m (typ.)@V =1.8

 9.19. Size:2435K  cn vbsemi
 am2305pe.pdf

AM2305PE www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

 9.20. Size:2923K  cn vbsemi
 am2302n.pdf

AM2302N www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conver