AM2314N Todos los transistores

 

AM2314N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM2314N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.3 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 0.7 V
   Carga de la puerta (Qg): 13.4 nC
   Tiempo de subida (tr): 24 nS
   Resistencia entre drenaje y fuente RDS(on): 0.032 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET AM2314N

 

AM2314N Datasheet (PDF)

 ..1. Size:168K  analog power
am2314n.pdf

AM2314N AM2314N

Analog Power AM2314NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6power management circuitry. Typical 20applications are power switch, power 0.044 @ VGS = 2.5V

 0.1. Size:293K  analog power
am2314ne.pdf

AM2314N AM2314N

Analog Power AM2314NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 2044 @ VGS = 2.5V4.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 9.1. Size:239K  analog power
am2313p.pdf

AM2314N AM2314N

Analog Power AM2313PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2-60for use in power management circuitry. 20 @ VGS = -4.5V -0.12Typical applications are voltage contro

 9.2. Size:238K  analog power
am2310n.pdf

AM2314N AM2314N

Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage

 9.3. Size:286K  analog power
am2319p.pdf

AM2314N AM2314N

Analog Power AM2319PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1-30Typical applications are voltage control 0.30 @ VGS = -4.

 9.4. Size:285K  analog power
am2318n.pdf

AM2314N AM2314N

Analog Power AM2318NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V2.4 Low thermal impedance 30250 @ VGS = 4.5V1.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.5. Size:236K  analog power
am2317p.pdf

AM2314N AM2314N

Analog Power AM2317PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0-30applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9power management in portable

 9.6. Size:290K  analog power
am2312n.pdf

AM2314N AM2314N

Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

 9.7. Size:527K  ait semi
am2319.pdf

AM2314N AM2314N

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m(max.) @ V = -10V DS(ON) GSR = 120m(max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM

 9.8. Size:668K  ait semi
am2317.pdf

AM2314N AM2314N

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.1A,R =45m(typ.)@V =-2.5V DS(ON) GShigh cell density advanced trench technology. -20V/-3.6A,R =53m(t

 9.9. Size:848K  cn vbsemi
am2319p-t1.pdf

AM2314N AM2314N

AM2319P-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

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