AM2318N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Analog Power AM2318NN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = 10V2.4 Low thermal impedance 30250 @ VGS = 4.5V1.9 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

Analog Power AM2314NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.032 @ VGS = 4.5 V 4.6power management circuitry. Typical 20applications are power switch, power 0.044 @ VGS = 2.5V

Analog Power AM2313PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and conserves energy, making this device ideal 10 @ VGS = -10 V -0.2-60for use in power management circuitry. 20 @ VGS = -4.5V -0.12Typical applications are voltage contro

Analog Power AM2314NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)32 @ VGS = 4.5V5.3 Low thermal impedance 2044 @ VGS = 2.5V4.5 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage

Analog Power AM2319PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal for use in power management circuitry. 0.20 @ VGS = -10 V -2.1-30Typical applications are voltage control 0.30 @ VGS = -4.

Analog Power AM2317PP - Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical 0.30 @ VGS = -10 V -1.0-30applications are DC-DC converters and 0.50 @ VGS = -4.5V -0.9power management in portable

Analog Power AM2312NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)10 @ VGS = 4.5V9.4 Low thermal impedance 2013 @ VGS = 2.5V8.2 Fast switching speed Typical Applications: SOT-23 Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATIN

AiT Semiconductor Inc. AM2319 www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM2319 is available in a SOT-23S package. -40V/-3A, R = 80m(max.) @ V = -10V DS(ON) GSR = 120m(max.) @ V = -4.5V DS(ON) GS Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Available in a SOT-23S package. ORDERING INFORM

AM2317 AiT Semiconductor Inc. www.ait-ic.com MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic enhancement -20V/-4.6A, R =35m(typ.)@V =-4.5V DS(ON) GSmode power field effect transistor is produced using -20V/-4.1A,R =45m(typ.)@V =-2.5V DS(ON) GShigh cell density advanced trench technology. -20V/-3.6A,R =53m(t

AM2319P-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-