AM2324N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM2324N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 4.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.4 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 16 nS
Resistencia entre drenaje y fuente RDS(on): 0.047 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET AM2324N
AM2324N Datasheet (PDF)
am2324n.pdf
Analog Power AM2324NN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to VDS (V) rDS(on) () ID (A)provide low rDS(on) and to ensure minimal 0.047 @ VGS = 4.5V 4.3power loss and heat dissipation. Typical 200.055@ VGS = 2.5V 4.0applications are DC-DC converters and power management in portable and
am2321pe.pdf
Analog Power AM2321PEP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.079 @ VGS = -4.5V -4.1-20battery-powered product
am2320ne.pdf
Analog Power AM2320NEN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)18 @ VGS = 4.5V7.0 Low thermal impedance 2021 @ VGS = 2.5V6.5 Fast switching speed SOT-23 Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUT
am2325p.pdf
Analog Power AM2325PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal VDS (V) rDS(on) (OHM) ID (A)power loss and heat dissipation. Typical 0.055 @ VGS = -4.5V -3.6applications are DC-DC converters and power management in portable and -200.089 @ VGS = -2.5V
am2328n.pdf
Analog Power AM2328NN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.025 @ VGS = 4.5 V 5.9power management circuitry. Typical 20applications are power switch, power 0.035 @ VGS = 2.5V
am2328ne.pdf
Analog Power AM2328NEN-Channel 20V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ()ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 0.022 @ VGS = 4.5 V 6.5battery-powered products su
am2327p.pdf
Analog Power AM2327PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize PRODUCT SUMMARYHigh Cell Density process. Low rDS(on) assures VDS (V) rDS(on) (OHM) ID (A)minimal power loss and conserves energy, making this device ideal for use in power management 0.052 @ VGS = -4.5V -3.6circuitry. Typical applications are DC-DC converters, power management in po
am2329p.pdf
Analog Power AM2329PP-Channel 30V (D-S) MOSFETThese miniature surface mount MOSFETsutilize High Cell Density process. Low rDS(on)PRODUCT SUMMARYassures minimal power loss and conserves VDS (V) rDS(on) ()ID (A)energy, making this device ideal for use in 0.112 @ VGS = 10 V 2.5power management circuitry. Typical -30applications are power switch, power 0.172 @ VGS = 4.5V
am2323p.pdf
Analog Power AM2323PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat 0.100 @ VGS = -4.5V -2.9dissipation. Typical applications are DC-DC converters and power management in portable and -20 0.160 @ VGS = -2.5V -
am2322n.pdf
Analog Power AM2322NN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ()ID (A)converters and power management in portable and 0.085 @ VGS = 10V 2.5battery-powered products such
am2326n.pdf
Analog Power AM2326NN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETsPRODUCT SUMMARYutilize High Cell Density process. Low VDS (V) rDS(on) ()ID (A)rDS(on) assures minimal power loss and 0.070 @ VGS = 4.5V 2.2conserves energy, making this device ideal for use in power management circuitry. 200.080@ VGS = 2.5V 2.0Typical applications are DC-DC 0.120@ VG
am2321p.pdf
Analog Power AM2321PP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)79 @ VGS = -4.5V -4.1 Low thermal impedance -20110 @ VGS = -2.5V -3.3 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am2321p.pdf
AM2321Pwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
