AM2340NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AM2340NE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 4 nC
Tiempo de subida (tr): 5 nS
Resistencia entre drenaje y fuente RDS(on): 0.043 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET AM2340NE
AM2340NE Datasheet (PDF)
am2340ne.pdf
Analog Power AM2340NEN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat 43 @ VGS = 10V 5.2dissipation. Typical applications are DC-DC converters and power management in portable and 40 50 @ VGS = 4.5V 4.2batter
am2340ne-t1.pdf
AM2340NE-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
am2340n.pdf
Analog Power AM2340NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)43 @ VGS = 10V5.2 Low thermal impedance 4064 @ VGS = 4.5V3.7 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE
am2341p.pdf
Analog Power AM2341PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETs utilize High Cell Density process. Low PRODUCT SUMMARYrDS(on) assures minimal power loss and conserves energy, making this device ideal VDS (V) rDS(on) ()ID (A)for use in power management circuitry. 0.082 @ VGS = -10 V -3.2Typical applications are lower voltage -40application, power
am2344n.pdf
Analog Power AM2344NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)26 @ VGS = 10V5.8 Low thermal impedance 4035 @ VGS = 4.5V5.0 Fast switching speed SOT-23 Typical Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits ABSOLUTE MAXIMUM RATI
am2345p.pdf
Analog Power AM2345PP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (O) ID (A)applications are DC-DC converters and 0.164 @ V = -10 V -3.2GSpower management in portable and -40battery-powered pr
am2342n.pdf
Analog Power AM2342NN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m(O) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ V = 10V 5.2GSconverters and power management in portable and 40battery-powered products s
am2343p.pdf
Analog Power AM2343PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU
am2343pe.pdf
Analog Power AM2343PEP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)57 @ VGS = -10V -3.9 Low thermal impedance -3089 @ VGS = -4.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXI
am2345pe.pdf
Analog Power AM2345PEP - Channel 40V (D-S) MOSFETThese miniature surface mount MOSFETsutilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) ()ID (A)applications are DC-DC converters and 0.164 @ VGS = -10 V -3.2power management in portable and -40battery-powered pr
am2347p.pdf
Analog Power AM2347PP-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)39 @ VGS = -10V -4.8 Low thermal impedance -4055 @ VGS = -4.5V -4.0 Fast switching speed SOT-23 Typical Applications: Load Switches DC/DC Conversion Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS
am2342ne.pdf
Analog Power AM2342NEN-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m()ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 86 @ VGS = 10V 5.2converters and power management in portable and 40battery-powered products s
am2342.pdf
AiT Semiconductor Inc. AM2342 www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM2342 is the N-Channel logic enhancement 20V/5.0A, R =25m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor is produced using 20V/4.5A, R =34m(typ.)@V =2.5V DS(ON) GShigh cell density. Advanced trench technology to 20V/4.0A, R =48m(typ.)@V =1.8
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
