AM2358NE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM2358NE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm

Encapsulados: SOT-23

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AM2358NE datasheet

 ..1. Size:165K  analog power
am2358ne.pdf pdf_icon

AM2358NE

Analog Power AM2358NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) ( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 0.092 @ VGS = 10 V 3.1 battery-powered products suc

 ..2. Size:2357K  cn vbsemi
am2358ne.pdf pdf_icon

AM2358NE

AM2358NE www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G 1

 7.1. Size:288K  analog power
am2358n.pdf pdf_icon

AM2358NE

Analog Power AM2358N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 92 @ VGS = 10V 3.1 Low thermal impedance 60 107 @ VGS = 4.5V 2.9 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM

 7.2. Size:1271K  cn vbsemi
am2358n-t1.pdf pdf_icon

AM2358NE

AM2358N-T1 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G

Otros transistores... AM2342NE, AM2343P, AM2343PE, AM2344N, AM2345P, AM2345PE, AM2347P, AM2358N, 2N7000, AM2359P, AM2359PE, AM2360N, AM2361P, AM2362N, AM2370N, AM2371P, AM2372N