AM2371P Todos los transistores

 

AM2371P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AM2371P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: SOT-23
     - Selección de transistores por parámetros

 

AM2371P Datasheet (PDF)

 ..1. Size:283K  analog power
am2371p.pdf pdf_icon

AM2371P

Analog Power AM2371PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) ()VDS (V) ID(A) Low r trench technologyDS(on)1.2 @ VGS = -10V -1 Low thermal impedance-1001.3 @ VGS = -4.5V -0.9 Fast switching speedTypical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters

 9.1. Size:293K  analog power
am2374n.pdf pdf_icon

AM2371P

Analog Power AM2374NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)92 @ VGS = 10V3.1 Low thermal impedance 10099 @ VGS = 4.5V3.0 Fast switching speed Typical Applications: SOT-23 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE

 9.2. Size:291K  analog power
am2370n.pdf pdf_icon

AM2371P

Analog Power AM2370NN-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)280 @ VGS = 10V1.5 Low thermal impedance 100355 @ VGS = 4.5V1.3 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost con

 9.3. Size:276K  analog power
am2373p.pdf pdf_icon

AM2371P

Analog Power AM2373PP-Channel 100-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)6 @ VGS = -10V -0.39 Low thermal impedance -1006.5 @ VGS = -4.5V -0.37 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

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History: KI1553DL | SSF11NS70UF | SIS472BDN | SI4368DY | IRFSL33N15D | IRF7665S2 | SWK15N04V

 

 
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