IRLZ24NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ24NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 45 W
Voltaje máximo drenador - fuente |Vds|: 55 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 15(max) nC
Tiempo de subida (tr): 74 nS
Conductancia de drenaje-sustrato (Cd): 130 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: TO262
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IRLZ24NL Datasheet (PDF)
irlz24ns irlz24nl.pdf
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PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irlz24nlpbf irlz24nspbf.pdf
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PD - 95584IRLZ24NSPbFIRLZ24NLPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRLZ24NS) DVDSS = 55Vl Low-profile through-hole (IRLZ24NL)l 175C Operating TemperatureRDS(on) = 0.06l Fast SwitchingGl Fully Avalanche RatedID = 18Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize
irlz24ns irlz24nl.pdf
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PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
auirlz24nl auirlz24ns.pdf
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AUIRLZ24NSAUTOMOTIVE GRADEAUIRLZ24NLFeatures HEXFET Power MOSFETDl Advanced Process TechnologyVDSS 55Vl Logic Level Gate Drivel 175C Operating TemperatureRDS(on) max. 0.06l Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID 18A l Lead-Free, RoHS Compliant Sl Automotive Qualified *DDDescriptionSpecifically designed for Automotive application
irlz24n.pdf
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PD - 9.1357AIRLZ24NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
irlz24npbf.pdf
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PD - 94998IRLZ24NPbF Lead-Freewww.irf.com 12/11/04IRLZ24NPbF2 www.irf.comIRLZ24NPbFwww.irf.com 3IRLZ24NPbF4 www.irf.comIRLZ24NPbFwww.irf.com 5IRLZ24NPbF6 www.irf.comIRLZ24NPbFwww.irf.com 7IRLZ24NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irlz24npbf.pdf
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PD - 94998IRLZ24NPbF Lead-Freewww.irf.com 12/11/04IRLZ24NPbF2 www.irf.comIRLZ24NPbFwww.irf.com 3IRLZ24NPbF4 www.irf.comIRLZ24NPbFwww.irf.com 5IRLZ24NPbF6 www.irf.comIRLZ24NPbFwww.irf.com 7IRLZ24NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irlz24npbf.pdf
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IRLZ24NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di
irlz24n.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ24N IIRLZ24NFEATURESStatic drain-source on-resistance:RDS(on) 0.06Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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