IRLZ24NL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLZ24NL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 74 nS
Cossⓘ - Capacitancia de salida: 130 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO262
- Selección de transistores por parámetros
IRLZ24NL Datasheet (PDF)
irlz24ns irlz24nl.pdf

PD - 91358EIRLZ24NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques
irlz24nlpbf irlz24nspbf.pdf

PD - 95584IRLZ24NSPbFIRLZ24NLPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRLZ24NS) DVDSS = 55Vl Low-profile through-hole (IRLZ24NL)l 175C Operating TemperatureRDS(on) = 0.06l Fast SwitchingGl Fully Avalanche RatedID = 18Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize
auirlz24nl auirlz24ns.pdf

AUIRLZ24NSAUTOMOTIVE GRADEAUIRLZ24NLFeatures HEXFET Power MOSFETDl Advanced Process TechnologyVDSS 55Vl Logic Level Gate Drivel 175C Operating TemperatureRDS(on) max. 0.06l Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID 18A l Lead-Free, RoHS Compliant Sl Automotive Qualified *DDDescriptionSpecifically designed for Automotive application
irlz24n.pdf

PD - 9.1357AIRLZ24NPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG Fully Avalanche RatedID = 18ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
Otros transistores... IRLWZ44A , IRLZ10 , IRLZ14 , IRLZ14A , IRLZ20 , IRLZ24 , IRLZ24A , IRLZ24N , IRFB4115 , IRLZ24NS , IRLZ30 , IRLZ34 , IRLZ34A , IRLZ34N , IRLZ34NL , IRLZ34NS , IRLZ40 .
History: CEP840G | IRFR9220 | BFC23 | SML80T27 | SIR496DP | SI4554DY | AO4914
History: CEP840G | IRFR9220 | BFC23 | SML80T27 | SIR496DP | SI4554DY | AO4914



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