AM2390N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AM2390N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.9 nS

Cossⓘ - Capacitancia de salida: 38 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: SOT-23

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AM2390N datasheet

 ..1. Size:276K  analog power
 am2390n.pdf pdf_icon

AM2390N

Analog Power AM2390N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 0.7 @ VGS = 10V 1.1 Low thermal impedance 150 1.2 @ VGS = 4.5V 0.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost conv

 9.1. Size:278K  analog power
 am2392n.pdf pdf_icon

AM2390N

Analog Power AM2392N N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = 10V 0.9 Low thermal impedance 150 1.4 @ VGS = 5.5V 0.8 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 9.2. Size:287K  analog power
 am2391p.pdf pdf_icon

AM2390N

Analog Power AM2391P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.2 @ VGS = -10V -0.9 Low thermal impedance -150 1.3 @ VGS = -4.5V -0.8 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost c

 9.3. Size:133K  analog power
 am2398n.pdf pdf_icon

AM2390N

Analog Power AM2398N N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) PRODUCT SUMMARY assures minimal power loss and conserves VDS (V) rDS(on) ( )ID (A) energy, making this device ideal for use in 0.194 @ VGS = 10 V 2.2 power management circuitry. Typical 60 applications are power switch, power 0.273 @ VGS = 4.5V 1

MOSTRAR MÁS

Otros transistores... AM2361P, AM2362N, AM2370N, AM2371P, AM2372N, AM2373P, AM2374N, AM2381P, IRF4905, AM2391P, AM2392N, AM2394NE, AM2398N, AM2398NE, IRFBC40APBF, IRFBC40ASPBF, IRFBC40LC