IRFBE30PBF Todos los transistores

 ..1. Size:2101K  international rectifier
 irfbe30pbf.pdf

PD - 94945 IRFBE30PbF Lead-Free 1/15/04 Document Number 91118 www.vishay.com 1 IRFBE30PbF Document Number 91118 www.vishay.com 2 IRFBE30PbF Document Number 91118 www.vishay.com 3 IRFBE30PbF Document Number 91118 www.vishay.com 4 IRFBE30PbF Document Number 91118 www.vishay.com 5 IRFBE30PbF Document Number 91118 www.vishay.com 6 IRFBE30PbF TO-220AB Package Ou

 7.1. Size:167K  international rectifier
 irfbe30.pdf

 7.2. Size:589K  international rectifier
 irfbe30spbf irfbe30lpbf.pdf

PD - 95507 IRFBE30SPbF IRFBE30LPbF HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D Fast Switching VDSS = 800V Ease of Paralleling Simple Drive Requirements RDS(on) = 3.0 Lead-Free G ID = 4.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device

 7.3. Size:448K  vishay
 irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem

 7.4. Size:1517K  vishay
 irfbe30 sihfbe30.pdf

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 7.5. Size:471K  vishay
 irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 800 Definition RDS(on) ( )VGS = 10 V 3.0 Dynamic dV/dt Rating Qg (Max.) (nC) 78 Repetitive Avalanche Rated Qgs (nC) 9.6 Fast Switching Qgd (nC) 45 Ease of Paralleling Configuration Single Simple Drive Requirem

 7.6. Size:1469K  infineon
 irfbe30 sihfbe30.pdf

IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 800 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.0 RoHS* Fast Switching Qg (Max.) (nC) 78 COMPLIANT Ease of Paralleling Qgs (nC) 9.6 Qgd (nC) 45 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D

 7.7. Size:284K  inchange semiconductor
 irfbe30.pdf

iscN-Channel MOSFET Transistor IRFBE30 FEATURES Low drain-source on-resistance RDS(ON) =3.0 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT