IRFBF20PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFBF20PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: TO-220AB

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IRFBF20PBF Datasheet (PDF)

..1. Size:249K international rectifier
irfbf20pbf.pdf

PD - 95704IRFBF20PbF Lead-Free Lead-Free9/10/04Document Number: 91120 www.vishay.com1IRFBF20PbFDocument Number: 91120 www.vishay.com2IRFBF20PbFDocument Number: 91120 www.vishay.com3IRFBF20PbFDocument Number: 91120 www.vishay.com4IRFBF20PbFDocument Number: 91120 www.vishay.com5IRFBF20PbFDocument Number: 91120 www.vishay.com6IRFBF20PbFP

..2. Size:1055K vishay
irfbf20pbf sihfbf20.pdf

IRFBF20, SiHFBF20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 900Available Repetitve Avalanche RatedRDS(on) ()VGS = 10 V 8.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 4.7Qgd (nC) 21 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDD

7.1. Size:168K international rectifier
irfbf20.pdf

7.2. Size:391K international rectifier
irfbf20spbf irfbf20lpbf.pdf

PD - 95547IRFBF20S/LPbF Lead-Free7/22/04Document Number: 91121 www.vishay.com1IRFBF20S/LPbFDocument Number: 91121 www.vishay.com2IRFBF20S/LPbFDocument Number: 91121 www.vishay.com3IRFBF20S/LPbFDocument Number: 91121 www.vishay.com4IRFBF20S/LPbFDocument Number: 91121 www.vishay.com5IRFBF20S/LPbFDocument Number: 91121 www.vishay.com6IRFBF20S/LPbF

7.3. Size:311K international rectifier
irfbf20s irfbf20l.pdf

PD - 9.1665IRFBF20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBF20S)D Low-profile through-hole (IRFBF20L) VDSS = 900V Available in Tape & Reel (IRFBF20S) Dynamic dv/dt RatingRDS(on) = 8.0 150C Operating TemperatureG Fast SwitchingID = 1.7A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

7.4. Size:270K vishay
irfbf20s sihfbf20s irfbf20l sihfbf20l.pdf

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 900 Surface Mount (IRFBF20S, SiHFBF20S)RDS(on) ()VGS = 10 V 8.0 Low-Profile Through-Hole (IRFBF20L, SiHFBF20L) Available in Tape and Reel (IRFBF20S, SiHFBF20S)Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs

7.5. Size:296K vishay
irfbf20spbf sihfbf20l sihfbf20s.pdf