IRLZ34 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 94885IRLZ34PbF Lead-Free12/11/03Document Number: 91327 www.vishay.com1IRLZ34PbFDocument Number: 91327 www.vishay.com2IRLZ34PbFDocument Number: 91327 www.vishay.com3IRLZ34PbFDocument Number: 91327 www.vishay.com4IRLZ34PbFDocument Number: 91327 www.vishay.com5IRLZ34PbFDocument Number: 91327 www.vishay.com6IRLZ34PbFTO-220AB Package Outline

IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single

IRLZ34, SiHLZ34Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Logic-Level Gate DriveRDS(on) ()VGS = 5.0 V 0.050RoHS* RDS(on) Specified at VGS = 4 V and 5 VCOMPLIANTQg (Max.) (nC) 35 175 C Operating TemperatureQgs (nC) 7.1 Fast SwitchingQgd (nC) 25 Ease of ParallelingConfiguration Single

IRLZ34PBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dir

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A

PD - 95583IRLZ34NSPbFIRLZ34NLPbFl Logic-Level Gate Drive HEXFET Power MOSFETl Advanced Process TechnologyDl Surface Mount (IRLZ34NS)VDSS = 55Vl Low-profile through-hole (IRLZ34NL)l 175C Operating TemperatureRDS(on) = 0.035l Fast SwitchingGl Fully Avalanche RatedID = 30Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutiliz

PD - 9.905AIRLZ34S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175C Operating Temperature RDS(on) = 0.050G Fast Switching Fully Avalanche RatedID = 30ASDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on

PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

PD - 9.1307BIRLZ34NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistan

PD - 91308AIRLZ34NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRLZ34NS) Low-profile through-hole (IRLZ34NL) 175C Operating TemperatureRDS(on) = 0.035 Fast SwitchingG Fully Avalanche RatedID = 30ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques

Philips Semiconductors Product specification N-channel enhancement mode IRLZ34N Logic level TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 30 A

IRLZ34AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic-Level Gate DriveRDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Ma

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 5 V 0.05 Surface Mount (IRLZ34S, SiHLZ34S)Qg (Max.) (nC) 35 Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)Qgs (nC) 7.1 175 C Operating Temperature Fast Sw

PD - 94830IRLZ34NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.035l Fully Avalanche RatedGl Lead-FreeID = 30ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLZ34N IIRLZ34NFEATURESStatic drain-source on-resistance:RDS(on) 35mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R