IRFD9020PBF Todos los transistores

 

IRFD9020PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFD9020PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: DIP-4

 Búsqueda de reemplazo de MOSFET IRFD9020PBF

 

IRFD9020PBF Datasheet (PDF)

 ..1. Size:1033K  vishay
irfd9020pbf.pdf

IRFD9020PBF
IRFD9020PBF

IRFD9020, SiHFD9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dv/dt RatingVDS (V) - 60Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 0.28RoHS* For Automatic InsertionQg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 175 C Opertaing TemperatureConfiguration Single Fast Switching

 6.1. Size:266K  international rectifier
irfd9020.pdf

IRFD9020PBF
IRFD9020PBF

PD- 90462IRFD9020www.irf.com 106/09/05IRFD90202 www.irf.comIRFD9020www.irf.com 3IRFD90204 www.irf.comIRFD9020www.irf.com 5IRFD90206 www.irf.comIRFD9020Peak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+- +- dv/dt controlled by RG

 7.1. Size:1837K  international rectifier
irfd9024pbf.pdf

IRFD9020PBF
IRFD9020PBF

PD- 95922IRFD9024PbF Lead-Free10/27/04Document Number: 91137 www.vishay.com1IRFD9024PbFDocument Number: 91137 www.vishay.com2IRFD9024PbFDocument Number: 91137 www.vishay.com3IRFD9024PbFDocument Number: 91137 www.vishay.com4IRFD9024PbFDocument Number: 91137 www.vishay.com5IRFD9024PbFDocument Number: 91137 www.vishay.com6IRFD9024PbFPeak Diode R

 7.2. Size:178K  international rectifier
irfd9024.pdf

IRFD9020PBF
IRFD9020PBF

 7.3. Size:1688K  vishay
irfd9024 sihfd9024.pdf

IRFD9020PBF
IRFD9020PBF

IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature

 7.4. Size:1690K  vishay
irfd9024pbf sihfd9024.pdf

IRFD9020PBF
IRFD9020PBF

IRFD9024, SiHFD9024Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 For Automatic InsertionRoHS*Qg (Max.) (nC) 19COMPLIANT End StackableQgs (nC) 5.4 P-ChannelQgd (nC) 11 Fast SwitchingConfiguration Single 175 C Operating Temperature

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLS2933-100

 

 
Back to Top

 


History: BLS2933-100

IRFD9020PBF
  IRFD9020PBF
  IRFD9020PBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top