IRFF30B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFF30B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Encapsulados: TO-3PB
Búsqueda de reemplazo de IRFF30B MOSFET
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IRFF30B datasheet
irff30b irff30c.pdf
RoHS IRFF30 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 3.6A, 900Volts DESCRIPTION D The Nell IRFF30 is a three-terminal silicon device with current conduction capability of 3.6A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as
2n6792 irff320.pdf
PD -90428C IRFF320 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792 HEXFET TRANSISTORS JANTXV2N6792 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF320 400V 1.8 2.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6800 irff330.pdf
PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing
2n6786 irff310.pdf
PD - 90425C IRFF310 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786 HEXFET TRANSISTORS JANTXV2N6786 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/556 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF310 400V 3.6 1.25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin
Otros transistores... IRFD9120PBF, IRFD9210PBF, IRFD9220PBF, IRFDC20PBF, IRFEA240, IRFF034, IRFF212, IRFF213, MMIS60R580P, IRFF30C, IRFF640, IRFG110, IRFG5110, IRFG5210, IRFG6110, IRFG9110, IRFH3702PBF
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