IRFF30B Todos los transistores

 

IRFF30B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFF30B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 78 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
   Paquete / Cubierta: TO-3PB
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IRFF30B Datasheet (PDF)

 ..1. Size:408K  nell
 irff30b irff30c.pdf pdf_icon

IRFF30B

RoHS IRFF30 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET3.6A, 900VoltsDESCRIPTIOND The Nell IRFF30 is a three-terminal silicon devicewith current conduction capability of 3.6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as

 9.1. Size:131K  international rectifier
 2n6792 irff320.pdf pdf_icon

IRFF30B

PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.2. Size:130K  international rectifier
 2n6800 irff330.pdf pdf_icon

IRFF30B

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.3. Size:129K  international rectifier
 2n6786 irff310.pdf pdf_icon

IRFF30B

PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

MOSTRAR MÁS

Otros transistores... IRFD9120PBF , IRFD9210PBF , IRFD9220PBF , IRFDC20PBF , IRFEA240 , IRFF034 , IRFF212 , IRFF213 , AO4468 , IRFF30C , IRFF640 , IRFG110 , IRFG5110 , IRFG5210 , IRFG6110 , IRFG9110 , IRFH3702PBF .

History: SI7540DP

 

 
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