IRFF30B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFF30B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Paquete / Cubierta: TO-3PB
Búsqueda de reemplazo de MOSFET IRFF30B
IRFF30B Datasheet (PDF)
irff30b irff30c.pdf
RoHS IRFF30 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET3.6A, 900VoltsDESCRIPTIOND The Nell IRFF30 is a three-terminal silicon devicewith current conduction capability of 3.6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as
2n6792 irff320.pdf
PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing
2n6800 irff330.pdf
PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing
2n6786 irff310.pdf
PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918