IRFF30B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFF30B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
Paquete / Cubierta: TO-3PB
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Otros transistores... IRFD9120PBF , IRFD9210PBF , IRFD9220PBF , IRFDC20PBF , IRFEA240 , IRFF034 , IRFF212 , IRFF213 , MMIS60R580P , IRFF30C , IRFF640 , IRFG110 , IRFG5110 , IRFG5210 , IRFG6110 , IRFG9110 , IRFH3702PBF .
History: TK1Q90A | SML50J10RU2 | SSF65R099SFD
History: TK1Q90A | SML50J10RU2 | SSF65R099SFD
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