IRFF30C Todos los transistores

 

IRFF30C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFF30C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.7 Ohm
   Paquete / Cubierta: TO-247AB
     - Selección de transistores por parámetros

 

IRFF30C Datasheet (PDF)

 ..1. Size:408K  nell
irff30b irff30c.pdf pdf_icon

IRFF30C

RoHS IRFF30 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET3.6A, 900VoltsDESCRIPTIOND The Nell IRFF30 is a three-terminal silicon devicewith current conduction capability of 3.6A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 900V, and max. threshold voltage of 4 volts. They are designed for use in applications such as

 9.1. Size:131K  international rectifier
2n6792 irff320.pdf pdf_icon

IRFF30C

PD -90428CIRFF320REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6792HEXFETTRANSISTORS JANTXV2N6792THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF320 400V 1.8 2.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.2. Size:130K  international rectifier
2n6800 irff330.pdf pdf_icon

IRFF30C

PD - 90432CIRFF330REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800HEXFETTRANSISTORS JANTXV2N6800THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/557400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF330 400V 1.0 3.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing

 9.3. Size:129K  international rectifier
2n6786 irff310.pdf pdf_icon

IRFF30C

PD - 90425CIRFF310REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6786HEXFETTRANSISTORS JANTXV2N6786THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/556400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF310 400V 3.6 1.25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VBZE50P03 | FCH20N60 | PTL16N06N | IPB60R190C6

 

 
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