IRFH4201
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH4201
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 25
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 49
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 43
nS
Cossⓘ - Capacitancia
de salida: 1700
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00095
Ohm
Paquete / Cubierta:
PQFN5X6
- Selección de transistores por parámetros
IRFH4201
Datasheet (PDF)
..1. Size:493K international rectifier
irfh4201.pdf 
IRFH4201PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 0.95(@ VGS = 10V) m(@ VGS = 4.5V) 1.25 Qg (typical) 46.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap B
7.1. Size:494K international rectifier
irfh4209d.pdf 
FastIRFET IRFH4209DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) 36 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (
8.1. Size:588K international rectifier
irfh4253dpbf.pdf 
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m(@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
8.2. Size:497K international rectifier
irfh4210d.pdf 
FastIRFET IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (
8.3. Size:499K international rectifier
irfh4213d.pdf 
FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35(@ VGS = 10V) m(@ VGS = 4.5V) 1.90 Qg (typical) 25 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDSon (
8.4. Size:504K international rectifier
irfh4213.pdf 
FastIRFET IRFH4213PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35(@ VGS = 10V) m(@ VGS = 4.5V) 1.90 Qg (typical) 26 nC ID 204 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and
8.5. Size:500K international rectifier
irfh4234.pdf 
FastIRFET IRFH4234PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 4.6(@ VGS = 10V) m(@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID 60 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Lo
8.6. Size:588K international rectifier
irfh4253d.pdf 
FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m(@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
8.7. Size:502K international rectifier
irfh4210.pdf 
FastIRFET IRFH4210PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) nC ID 245 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORi
8.8. Size:561K international rectifier
irfh4251d.pdf 
FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m(@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
8.9. Size:852K international rectifier
irfh4257d.pdf 
FastIRFET IRFH4257DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m(@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c
8.10. Size:572K international rectifier
irfh4255d.pdf 
FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 2.10 m(@VGS = 4.5V) Qg (typical) 10 23 nC ID 30 30 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
8.11. Size:561K international rectifier
irfh4251dpbf.pdf 
FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m(@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low
8.12. Size:503K international rectifier
irfh4226.pdf 
FastIRFET IRFH4226PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4(@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC
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