IRFH4201 Todos los transistores

 

IRFH4201 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH4201

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.5 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 49 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 94 nC

Tiempo de elevación (tr): 43 nS

Conductancia de drenaje-sustrato (Cd): 1700 pF

Resistencia drenaje-fuente RDS(on): 0.00095 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH4201

 

IRFH4201 Datasheet (PDF)

1.1. irfh4201.pdf Size:493K _upd-mosfet

IRFH4201
IRFH4201

IRFH4201PbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 0.95 (@ VGS = 10V) m (@ VGS = 4.5V) 1.25 Qg (typical) 46.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap B

3.1. irfh4209d.pdf Size:494K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4209DPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 1.10 (@ VGS = 10V) m (@ VGS = 4.5V) 1.35 Qg (typical) 36 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (<1.10 m) Lower Conduction Losses Schottky Intrinsic Diode with

 4.1. irfh4226.pdf Size:503K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4226PbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 2.4 (@ VGS = 10V) m (@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC

4.2. irfh4253d.pdf Size:588K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4253DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 4.3. irfh4213d.pdf Size:499K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4213DPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 1.35 (@ VGS = 10V) m (@ VGS = 4.5V) 1.90 Qg (typical) 25 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDSon (<1.35m) Lower Conduction Losses Schottky Intrinsic Diode with Lo

4.4. irfh4255d.pdf Size:572K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4255DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 2.10 m (@VGS = 4.5V) Qg (typical) 10 23 nC ID 30 30 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 4.5. irfh4234.pdf Size:500K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4234PbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 4.6 (@ VGS = 10V) m (@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID 60 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Lo

4.6. irfh4210.pdf Size:502K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4210PbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 1.10 (@ VGS = 10V) m (@ VGS = 4.5V) 1.35 Qg (typical)  nC ID 245 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORi

4.7. irfh4257d.pdf Size:852K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4257DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m (@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c

4.8. irfh4251d.pdf Size:561K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4251DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m (@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

4.9. irfh4213.pdf Size:504K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4213PbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 1.35 (@ VGS = 10V) m (@ VGS = 4.5V) 1.90 Qg (typical) 26 nC ID 204 A (@TC (Bottom) = 25°C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and

4.10. irfh4210d.pdf Size:497K _upd-mosfet

IRFH4201
IRFH4201

FastIRFET™ IRFH4210DPbF HEXFET® Power MOSFET VDSS 25 V RDS(on) max 1.10 (@ VGS = 10V) m (@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25°C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (<1.10 m) Lower Conduction Losses Schottky Intrinsic Diode wi

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