IRFH4226 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFH4226
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH4226

IRFH4226 Datasheet (PDF)

..1. Size:503K international rectifier
irfh4226.pdf

FastIRFET IRFH4226PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 2.4(@ VGS = 10V) m(@ VGS = 4.5V) 3.3 Qg (typical) 16 nC ID 70 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 16 nC

8.1. Size:493K international rectifier
irfh4201.pdf

IRFH4201PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 0.95(@ VGS = 10V) m(@ VGS = 4.5V) 1.25 Qg (typical) 46.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and Hot Swap B

8.2. Size:494K international rectifier
irfh4209d.pdf

FastIRFET IRFH4209DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) 36 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (

8.3. Size:497K international rectifier
irfh4210d.pdf

FastIRFET IRFH4210DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) 37.0 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDS(ON) (

8.4. Size:499K international rectifier
irfh4213d.pdf

FastIRFET IRFH4213DPbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35(@ VGS = 10V) m(@ VGS = 4.5V) 1.90 Qg (typical) 25 nC ID 100 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Features Benefits Low RDSon (

8.5. Size:504K international rectifier
irfh4213.pdf

FastIRFET IRFH4213PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.35(@ VGS = 10V) m(@ VGS = 4.5V) 1.90 Qg (typical) 26 nC ID 204 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORing and

8.6. Size:500K international rectifier
irfh4234.pdf

FastIRFET IRFH4234PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 4.6(@ VGS = 10V) m(@ VGS = 4.5V) 7.3 Qg (typical) 8.2 nC ID 60 A PQFN 5X6 mm (@TC (Bottom) = 25C) Applications Control MOSFET for Sync Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Features Benefits Low Charge (typical 8.2 nC) Lo

8.7. Size:588K international rectifier
irfh4253d.pdf

FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m(@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

8.8. Size:502K international rectifier
irfh4210.pdf

FastIRFET IRFH4210PbF HEXFET Power MOSFET VDSS 25 V RDS(on) max 1.10(@ VGS = 10V) m(@ VGS = 4.5V) 1.35 Qg (typical) nC ID 245 A(@TC (Bottom) = 25C) PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for Synchronous Buck Converters Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters Active ORi

8.9. Size:561K international rectifier
irfh4251d.pdf

FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m(@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

8.10. Size:852K international rectifier
irfh4257d.pdf

FastIRFET IRFH4257DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m(@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c

8.11. Size:572K international rectifier
irfh4255d.pdf

FastIRFET IRFH4255DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 2.10 m(@VGS = 4.5V) Qg (typical) 10 23 nC ID 30 30 A(@TC = 25C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

8.12. Size:588K infineon
irfh4253dpbf.pdf