IRFH4251D Todos los transistores

 

IRFH4251D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH4251D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 45 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 365 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: PQFN5X6

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IRFH4251D datasheet

 ..1. Size:561K  international rectifier
 irfh4251d.pdf pdf_icon

IRFH4251D

FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m (@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 ..2. Size:561K  international rectifier
 irfh4251dpbf.pdf pdf_icon

IRFH4251D

FastIRFET IRFH4251DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m (@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 7.1. Size:588K  international rectifier
 irfh4253dpbf.pdf pdf_icon

IRFH4251D

FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 7.2. Size:588K  international rectifier
 irfh4253d.pdf pdf_icon

IRFH4251D

FastIRFET IRFH4253DPbF HEXFET Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25 C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

MOSTRAR MÁS

Otros transistores... IRFH4201 , IRFH4209D , IRFH4210 , IRFH4210D , IRFH4213 , IRFH4213D , IRFH4226 , IRFH4234 , IRLZ44N , IRFH4253D , IRFH4255D , IRFH4257D , IRFH5007PBF , IRFH5010PBF , IRFH5015PBF , IRFH5020PBF , IRFH5053PBF .

 

 

 

 

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