IRFH4251D Todos los transistores

 

IRFH4251D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH4251D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 45 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.1 V

Carga de compuerta (Qg): 10 nC

Tiempo de elevación (tr): 61 nS

Conductancia de drenaje-sustrato (Cd): 365 pF

Resistencia drenaje-fuente RDS(on): 0.0032 Ohm

Empaquetado / Estuche: PQFN5X6

Búsqueda de reemplazo de MOSFET IRFH4251D

 

IRFH4251D Datasheet (PDF)

1.1. irfh4251d.pdf Size:561K _upd-mosfet

IRFH4251D
IRFH4251D

FastIRFET™ IRFH4251DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.10 m (@VGS = 4.5V) Qg (typical) 10 44 nC ID 45 45 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

3.1. irfh4253d.pdf Size:588K _upd-mosfet

IRFH4251D
IRFH4251D

FastIRFET™ IRFH4253DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 1.45 m (@VGS = 4.5V) Qg (typical) 10 31 nC ID 35 35 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

3.2. irfh4255d.pdf Size:572K _upd-mosfet

IRFH4251D
IRFH4251D

FastIRFET™ IRFH4255DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.60 2.10 m (@VGS = 4.5V) Qg (typical) 10 23 nC ID 30 30 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters DUAL PQFN 5X6 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low

 3.3. irfh4257d.pdf Size:852K _upd-mosfet

IRFH4251D
IRFH4251D

FastIRFET™ IRFH4257DPbF HEXFET® Power MOSFET Q1 Q2 VDSS 25 25 V RDS(on) max 4.70 1.80 m (@VGS = 4.5V) Qg (typical) 9.7 23 nC ID 25 25 A (@TC = 25°C) Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Benefits Control and synchronous MOSFETs in one package Increased power density Low c

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


IRFH4251D
  IRFH4251D
  IRFH4251D
  IRFH4251D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
Back to Top