IRFH5015PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5015PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.6 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 33 nC

Tiempo de elevación (tr): 9.7 nS

Conductancia de drenaje-sustrato (Cd): 205 pF

Resistencia drenaje-fuente RDS(on): 0.031 Ohm

Empaquetado / Estuche: PQFN5X6

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IRFH5015PBF Datasheet (PDF)

1.1. irfh5015pbf.pdf Size:214K _upd-mosfet

PD - 97446 IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 33 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 56 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Low

1.2. irfh5015pbf.pdf Size:285K _international_rectifier

IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 44 A (@Tmb = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Lower Conduction Losses Low T

3.1. irfh5010pbf.pdf Size:301K _upd-mosfet

PD -96297 IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses

3.2. irfh5010pbf.pdf Size:279K _international_rectifier

PD-96297A IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses L

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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