IRFH5015PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5015PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 3.6 W
Tensión drenaje-fuente (Vds): 150 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 5 V
Carga de compuerta (Qg): 33 nC
Tiempo de elevación (tr): 9.7 nS
Conductancia de drenaje-sustrato (Cd): 205 pF
Resistencia drenaje-fuente RDS(on): 0.031 Ohm
Empaquetado / Estuche: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5015PBF
IRFH5015PBF Datasheet (PDF)
1.1. irfh5015pbf.pdf 
Size:214K _upd-mosfet
PD - 97446 IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 33 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 56 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Low
1.2. irfh5015pbf.pdf Size:285K _international_rectifier
IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 44 A (@Tmb = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Lower Conduction Losses Low T
3.1. irfh5010pbf.pdf Size:301K _upd-mosfet
PD -96297 IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses
3.2. irfh5010pbf.pdf Size:279K _international_rectifier
PD-96297A IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses L
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
