IRFH5015PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFH5015PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 33 nC
trⓘ - Tiempo de subida: 9.7 nS
Cossⓘ - Capacitancia de salida: 205 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.031 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de MOSFET IRFH5015PBF
IRFH5015PBF Datasheet (PDF)
irfh5015pbf.pdf
PD - 97446IRFH5015PbFHEXFET Power MOSFETVDS150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical)33nCRG (typical)1.7ID PQFN 5X6 mm56 A(@Tc(Bottom) = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5015pbf.pdf
IRFH5015PbFHEXFET Power MOSFETVDS 150 VRDS(on) max 31 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.7 ID PQFN 5X6 mm44 A(@Tmb = 25C)Applications Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010trpbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010pbf.pdf
PD -96297IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)65nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
irfh5010pbf.pdf
IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IRFB5615 | SDF40N50JAM
History: IRFB5615 | SDF40N50JAM
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918