IRFH5053PBF Todos los transistores

 

IRFH5053PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5053PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: PQFN
 

 Búsqueda de reemplazo de IRFH5053PBF MOSFET

   - Selección ⓘ de transistores por parámetros

 

Principales características: IRFH5053PBF

 ..1. Size:253K  international rectifier
irfh5053pbf.pdf pdf_icon

IRFH5053PBF

PD - 97359 IRFH5053PbF Applications HEXFET Power MOSFET l 3 Phase Boost Converter Applications VDSS RDS(on) max Qg l Secondary Side Synchronous Rectification 18m 100V @VGS = 10V 24nC Benefits S l Very low RDS(ON) at 10V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l Lead-Free (Qualified up to 260 C R

 8.1. Size:260K  1
irfh5020trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

 8.2. Size:263K  1
irfh5006trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

 8.3. Size:254K  1
irfh5010trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

Otros transistores... IRFH4251D , IRFH4253D , IRFH4255D , IRFH4257D , IRFH5007PBF , IRFH5010PBF , IRFH5015PBF , IRFH5020PBF , AON6414A , IRFH5106PBF , IRFH5206PBF , IRFH5207PBF , IRFH5210PBF , IRFH5250PBF , IRFH5255PBF , IRFH5300PBF , IRFH5301PBF .

 

 
Back to Top

 


 
.