IRFH5053PBF Todos los transistores

 

IRFH5053PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFH5053PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: PQFN
     - Selección de transistores por parámetros

 

IRFH5053PBF Datasheet (PDF)

 ..1. Size:253K  international rectifier
 irfh5053pbf.pdf pdf_icon

IRFH5053PBF

PD - 97359IRFH5053PbFApplicationsHEXFET Power MOSFETl 3 Phase Boost Converter ApplicationsVDSS RDS(on) maxQgl Secondary Side Synchronous Rectification18m100V @VGS = 10V24nCBenefitsSl Very low RDS(ON) at 10V VGSSl Low Gate ChargeDSl Fully Characterized Avalanche Voltage andDG CurrentDl 100% Tested for RGDl Lead-Free (Qualified up to 260C R

 8.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5020PbFHEXFET Power MOSFETVDS 200 VRDS(on) max 55 m(@VGS = 10V)Qg (typical) 36 nCRG (typical) 1.9 ID 34 A(@Tc(Bottom) = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon Lower Conduction LossesLow The

 8.2. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5006PbFHEXFET Power MOSFETVDS 60 VRDS(on) max 4.1 m(@VGS = 10V)Qg (typical) 69 nCRG (typical) 1.2 ID 100 A(@Tmb = 25C)PQFN 5X6 mmApplications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost ConvertersFeatures and BenefitsBenefitsFeaturesLow RDSon ( 4.1m) Lower Conduction Losses

 8.3. Size:254K  1
 irfh5010trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5010PbFHEXFET Power MOSFETVDS100 VRDS(on) max 9.0 m(@VGS = 10V)Qg (typical)67nCRG (typical)1.2ID PQFN 5X6 mm100 A(@Tc(Bottom) = 25C)Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick ApplicationsFeatures and BenefitsBenefitsFeaturesLow RDSon (

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SJ476-01S | IXFR80N60P3 | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SSM5N05FU

 

 
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