IRFH5053PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5053PBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.5 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: PQFN

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IRFH5053PBF datasheet

 ..1. Size:253K  international rectifier
 irfh5053pbf.pdf pdf_icon

IRFH5053PBF

PD - 97359 IRFH5053PbF Applications HEXFET Power MOSFET l 3 Phase Boost Converter Applications VDSS RDS(on) max Qg l Secondary Side Synchronous Rectification 18m 100V @VGS = 10V 24nC Benefits S l Very low RDS(ON) at 10V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l Lead-Free (Qualified up to 260 C R

 8.1. Size:260K  1
 irfh5020trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

 8.2. Size:263K  1
 irfh5006trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5006PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 4.1 m (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 ID 100 A (@Tmb = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon ( 4.1m ) Lower Conduction Losses

 8.3. Size:254K  1
 irfh5010trpbf.pdf pdf_icon

IRFH5053PBF

IRFH5010PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 9.0 m (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

MOSTRAR MÁS

Otros transistores... IRFH4251D, IRFH4253D, IRFH4255D, IRFH4257D, IRFH5007PBF, IRFH5010PBF, IRFH5015PBF, IRFH5020PBF, 10N60, IRFH5106PBF, IRFH5206PBF, IRFH5207PBF, IRFH5210PBF, IRFH5250PBF, IRFH5255PBF, IRFH5300PBF, IRFH5301PBF