IRFH5053PBF Todos los transistores

 

IRFH5053PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5053PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.1 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 9.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.9 V

Carga de compuerta (Qg): 24 nC

Tiempo de elevación (tr): 7.5 nS

Conductancia de drenaje-sustrato (Cd): 230 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: PQFN

Búsqueda de reemplazo de MOSFET IRFH5053PBF

 

IRFH5053PBF Datasheet (PDF)

1.1. irfh5053pbf.pdf Size:253K _upd-mosfet

IRFH5053PBF
IRFH5053PBF

PD - 97359 IRFH5053PbF Applications HEXFET® Power MOSFET l 3 Phase Boost Converter Applications VDSS RDS(on) max Qg l Secondary Side Synchronous Rectification 18m 100V Ω@VGS = 10V 24nC Benefits S l Very low RDS(ON) at 10V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l Lead-Free (Qualified up to 260°C R

1.2. irfh5053pbf.pdf Size:253K _international_rectifier

IRFH5053PBF
IRFH5053PBF

PD - 97359 IRFH5053PbF Applications HEXFET® Power MOSFET l 3 Phase Boost Converter Applications VDSS RDS(on) max Qg l Secondary Side Synchronous Rectification 18m 100V Ω@VGS = 10V 24nC Benefits S l Very low RDS(ON) at 10V VGS S l Low Gate Charge D S l Fully Characterized Avalanche Voltage and D G Current D l 100% Tested for RG D l Lead-Free (Qualified up to 260°C R

 4.1. irfh5015pbf.pdf Size:214K _upd-mosfet

IRFH5053PBF
IRFH5053PBF

PD - 97446 IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 33 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 56 A (@Tc(Bottom) = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Low

4.2. irfh5020pbf.pdf Size:341K _upd-mosfet

IRFH5053PBF
IRFH5053PBF

PD -97428 IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 43 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses

 4.3. irfh5010pbf.pdf Size:301K _upd-mosfet

IRFH5053PBF
IRFH5053PBF

PD -96297 IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses

4.4. irfh5007pbf.pdf Size:332K _upd-mosfet

IRFH5053PBF
IRFH5053PBF

PD -95958 IRFH5007PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 5.9 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ)

 4.5. irfh5015pbf.pdf Size:285K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5015PbF HEXFET® Power MOSFET VDS 150 V RDS(on) max 31 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.7 Ω ID PQFN 5X6 mm 44 A (@Tmb = 25°C) Applications • Primary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (< 31 mΩ) Lower Conduction Losses Low T

4.6. irfh5020pbf.pdf Size:273K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5020PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 55 mΩ (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 Ω ID 34 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

4.7. irfh5006pbf.pdf Size:277K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5006PbF HEXFET® Power MOSFET VDS 60 V RDS(on) max 4.1 mΩ (@VGS = 10V) Qg (typical) 69 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 4.1mΩ) Lower Conduction Losses

4.8. irfh5010pbf.pdf Size:279K _international_rectifier

IRFH5053PBF
IRFH5053PBF

PD-96297A IRFH5010PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 9.0 mΩ (@VGS = 10V) Qg (typical) 67 nC RG (typical) 1.2 Ω ID PQFN 5X6 mm 100 A (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (< 9 mΩ) Lower Conduction Losses L

4.9. irfh5007pbf.pdf Size:277K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5007PbF HEXFET® Power MOSFET VDS 75 V RDS(on) max 5.9 mΩ (@VGS = 10V) Qg (typical) 65 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 5.9mΩ) Lower Conduction Losses

4.10. irfh5025pbf.pdf Size:272K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5025PbF HEXFET® Power MOSFET VDS 250 V RDS(on) max 100 mΩ (@VGS = 10V) Qg (typical) 37 nC RG (typical) 1.6 Ω ID 25 A PQFN 5X6 mm (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low Th

4.11. irfh5004pbf.pdf Size:273K _international_rectifier

IRFH5053PBF
IRFH5053PBF

IRFH5004PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 2.6 mΩ (@VGS = 10V) Qg (typical) 73 nC RG (typical) 1.2 Ω ID 100 A (@Tmb = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon (≤ 2.6mΩ) Lower Conduction Losses L

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