IRFH5106PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFH5106PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: PQFN5X6

 Búsqueda de reemplazo de IRFH5106PBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRFH5106PBF datasheet

 ..1. Size:331K  international rectifier
irfh5106pbf.pdf pdf_icon

IRFH5106PBF

PD -95959 IRFH5106PbF HEXFET Power MOSFET VDS 60 V RDS(on) max 5.6 m (@VGS = 10V) Qg (typical) 50 nC RG (typical) 1.4 ID 100 A PQFN 5X6 mm (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 5.6m )

 7.1. Size:256K  international rectifier
irfh5104pbf.pdf pdf_icon

IRFH5106PBF

IRFH5104PbF HEXFET Power MOSFET VDS 40 V RDS(on) max 3.5 m (@VGS = 10V) Qg (typical) 53 nC RG (typical) 1.4 ID 100 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon ( 3.5m ) Lower Conductio

 8.1. Size:250K  international rectifier
irfh5110pbf.pdf pdf_icon

IRFH5106PBF

IRFH5110PbF HEXFET Power MOSFET VDS 100 V RDS(on) max 12.4 m (@VGS = 10V) Qg (typical) 54 nC RG (typical) 1.5 ID PQFN 5X6 mm 63 A (@Tc(Bottom) = 25 C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Features and Benefits Benefits Features Low RDSon (

 9.1. Size:260K  1
irfh5020trpbf.pdf pdf_icon

IRFH5106PBF

IRFH5020PbF HEXFET Power MOSFET VDS 200 V RDS(on) max 55 m (@VGS = 10V) Qg (typical) 36 nC RG (typical) 1.9 ID 34 A (@Tc(Bottom) = 25 C) PQFN 5X6 mm Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Benefits Features Low RDSon Lower Conduction Losses Low The

Otros transistores... IRFH4253D, IRFH4255D, IRFH4257D, IRFH5007PBF, IRFH5010PBF, IRFH5015PBF, IRFH5020PBF, IRFH5053PBF, IRFB4115, IRFH5206PBF, IRFH5207PBF, IRFH5210PBF, IRFH5250PBF, IRFH5255PBF, IRFH5300PBF, IRFH5301PBF, IRFH5303PBF